Hydrogenated amorphous silicon germanium black-matrix material for active-matrix liquid-crystal displays

Hagen Klauk, Steven L. Wright, Lauren F. Palmateer, Suzanne E. Mohney, Thomas Nelson Jackson

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Integration of the black matrix (BM) in active-matrix liquid-crystal displays (AMLCDs) into the TFT array is desirable to improve display performance. This requires a black-matrix material that is both an optical absorber and an electrical insulator. Amorphous silicon germanium (a-SiGe:H) is a candidate material for this application. When deposited by magnetron sputtering, a-SiGe:H can have both high optical density and high electrical resistivity. Compared to organic materials considered for black-matrix integration, a-SiGe:H offers higher optical density at a given film thickness, more-flexible processing, and better process compatibility with AMLCD fabrication.

Original languageEnglish (US)
Pages (from-to)393-397
Number of pages5
JournalJournal of the Society for Information Display
Volume5
Issue number4
DOIs
StatePublished - Jan 1 1997

Fingerprint

Germanium
matrix materials
Amorphous silicon
Liquid crystal displays
amorphous silicon
germanium
liquid crystals
optical density
matrices
Density (optical)
organic materials
compatibility
absorbers
magnetron sputtering
film thickness
Magnetron sputtering
insulators
Film thickness
fabrication
electrical resistivity

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

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abstract = "Integration of the black matrix (BM) in active-matrix liquid-crystal displays (AMLCDs) into the TFT array is desirable to improve display performance. This requires a black-matrix material that is both an optical absorber and an electrical insulator. Amorphous silicon germanium (a-SiGe:H) is a candidate material for this application. When deposited by magnetron sputtering, a-SiGe:H can have both high optical density and high electrical resistivity. Compared to organic materials considered for black-matrix integration, a-SiGe:H offers higher optical density at a given film thickness, more-flexible processing, and better process compatibility with AMLCD fabrication.",
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Hydrogenated amorphous silicon germanium black-matrix material for active-matrix liquid-crystal displays. / Klauk, Hagen; Wright, Steven L.; Palmateer, Lauren F.; Mohney, Suzanne E.; Jackson, Thomas Nelson.

In: Journal of the Society for Information Display, Vol. 5, No. 4, 01.01.1997, p. 393-397.

Research output: Contribution to journalArticle

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AU - Jackson, Thomas Nelson

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