Hydrogenation-enhanced low temperature activation of boron in silicon

A. Vengurlekar, S. Ashok, D. Theodore

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this work, we report on our study the effect of hydrogen plasma treatment by an ECR plasma on the activation and diffusion of boron in silicon at ultra-shallow depths. Hydrogenated and unhydrogenated samples were implanted with boron, followed by rapid thermal annealing for 20 seconds, at 450, 550, 650 and 850°C. Spreading resistance profiling (SRP) was carried out on all the samples to determine the profile of the electrically active boron. It was seen that there was enhanced activation of boron at the lower annealing temperature of 450°C. However no significant difference was observed at the higher annealing temperatures. The enhancement in boron activation at lower temperature was attributed to the creation of vacancies in the boron-implanted region, in addition to the lattice-relaxation effect by the presence of atomic hydrogen.

Original languageEnglish (US)
Title of host publicationExtended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004
EditorsX.P. Qu, G.P. Ru, B.Z. Li, B. Mizuno, H. Iwai
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages42-45
Number of pages4
Volume4
ISBN (Print)7309039157
StatePublished - 2004
EventExtended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004 - Shanghai, China
Duration: Mar 15 2004Mar 16 2004

Other

OtherExtended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004
CountryChina
CityShanghai
Period3/15/043/16/04

Fingerprint

Hydrogenation
Boron
Chemical activation
Silicon
Temperature
Annealing
Plasmas
Hydrogen
Rapid thermal annealing
Vacancies

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Vengurlekar, A., Ashok, S., & Theodore, D. (2004). Hydrogenation-enhanced low temperature activation of boron in silicon. In X. P. Qu, G. P. Ru, B. Z. Li, B. Mizuno, & H. Iwai (Eds.), Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004 (Vol. 4, pp. 42-45). Institute of Electrical and Electronics Engineers Inc..
Vengurlekar, A. ; Ashok, S. ; Theodore, D. / Hydrogenation-enhanced low temperature activation of boron in silicon. Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004. editor / X.P. Qu ; G.P. Ru ; B.Z. Li ; B. Mizuno ; H. Iwai. Vol. 4 Institute of Electrical and Electronics Engineers Inc., 2004. pp. 42-45
@inproceedings{d7ca1738a7024d87973941f277305fde,
title = "Hydrogenation-enhanced low temperature activation of boron in silicon",
abstract = "In this work, we report on our study the effect of hydrogen plasma treatment by an ECR plasma on the activation and diffusion of boron in silicon at ultra-shallow depths. Hydrogenated and unhydrogenated samples were implanted with boron, followed by rapid thermal annealing for 20 seconds, at 450, 550, 650 and 850°C. Spreading resistance profiling (SRP) was carried out on all the samples to determine the profile of the electrically active boron. It was seen that there was enhanced activation of boron at the lower annealing temperature of 450°C. However no significant difference was observed at the higher annealing temperatures. The enhancement in boron activation at lower temperature was attributed to the creation of vacancies in the boron-implanted region, in addition to the lattice-relaxation effect by the presence of atomic hydrogen.",
author = "A. Vengurlekar and S. Ashok and D. Theodore",
year = "2004",
language = "English (US)",
isbn = "7309039157",
volume = "4",
pages = "42--45",
editor = "X.P. Qu and G.P. Ru and B.Z. Li and B. Mizuno and H. Iwai",
booktitle = "Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
address = "United States",

}

Vengurlekar, A, Ashok, S & Theodore, D 2004, Hydrogenation-enhanced low temperature activation of boron in silicon. in XP Qu, GP Ru, BZ Li, B Mizuno & H Iwai (eds), Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004. vol. 4, Institute of Electrical and Electronics Engineers Inc., pp. 42-45, Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004, Shanghai, China, 3/15/04.

Hydrogenation-enhanced low temperature activation of boron in silicon. / Vengurlekar, A.; Ashok, S.; Theodore, D.

Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004. ed. / X.P. Qu; G.P. Ru; B.Z. Li; B. Mizuno; H. Iwai. Vol. 4 Institute of Electrical and Electronics Engineers Inc., 2004. p. 42-45.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Hydrogenation-enhanced low temperature activation of boron in silicon

AU - Vengurlekar, A.

AU - Ashok, S.

AU - Theodore, D.

PY - 2004

Y1 - 2004

N2 - In this work, we report on our study the effect of hydrogen plasma treatment by an ECR plasma on the activation and diffusion of boron in silicon at ultra-shallow depths. Hydrogenated and unhydrogenated samples were implanted with boron, followed by rapid thermal annealing for 20 seconds, at 450, 550, 650 and 850°C. Spreading resistance profiling (SRP) was carried out on all the samples to determine the profile of the electrically active boron. It was seen that there was enhanced activation of boron at the lower annealing temperature of 450°C. However no significant difference was observed at the higher annealing temperatures. The enhancement in boron activation at lower temperature was attributed to the creation of vacancies in the boron-implanted region, in addition to the lattice-relaxation effect by the presence of atomic hydrogen.

AB - In this work, we report on our study the effect of hydrogen plasma treatment by an ECR plasma on the activation and diffusion of boron in silicon at ultra-shallow depths. Hydrogenated and unhydrogenated samples were implanted with boron, followed by rapid thermal annealing for 20 seconds, at 450, 550, 650 and 850°C. Spreading resistance profiling (SRP) was carried out on all the samples to determine the profile of the electrically active boron. It was seen that there was enhanced activation of boron at the lower annealing temperature of 450°C. However no significant difference was observed at the higher annealing temperatures. The enhancement in boron activation at lower temperature was attributed to the creation of vacancies in the boron-implanted region, in addition to the lattice-relaxation effect by the presence of atomic hydrogen.

UR - http://www.scopus.com/inward/record.url?scp=3543130663&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3543130663&partnerID=8YFLogxK

M3 - Conference contribution

SN - 7309039157

VL - 4

SP - 42

EP - 45

BT - Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004

A2 - Qu, X.P.

A2 - Ru, G.P.

A2 - Li, B.Z.

A2 - Mizuno, B.

A2 - Iwai, H.

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Vengurlekar A, Ashok S, Theodore D. Hydrogenation-enhanced low temperature activation of boron in silicon. In Qu XP, Ru GP, Li BZ, Mizuno B, Iwai H, editors, Extended Abstracts of the Fourth International Workshop on Junction Technology, IWJT 2004. Vol. 4. Institute of Electrical and Electronics Engineers Inc. 2004. p. 42-45