I Barrier layer mechanism engineering in calcium copper titanate thin film capacitors through microstructure control

E. A. Paisley, M. D. Losego, S. M. Aygun, H. S. Craft, Jon-Paul Maria

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

A peak permittivity greater than 10 000 has been achieved for calcium copper titanate (CCT) thin films by engineering a thin film microstructure that maximizes space charge contributions to polarizability. This permittivity is an order of magnitude greater than previous polycrystalline thin film efforts. This unique microstructure control is accomplished using a chemical solution deposition process flow that produces highly dense parallel layers ∼100 nm in thickness. We observe a thickness dependent permittivity where the entire film thickness constitutes the conducting region of a barrier layer capacitor despite the presence of multiple grain boundaries within that thickness. The model predictions are in good agreement with experimental data and are consistent with existing literature reports. These trends in permittivity with dielectric thickness raise new questions regarding the nature of barrier layers in CCT-and specifically, these results suggest that grain boundaries may not always participate as high resistance interlayers.

Original languageEnglish (US)
Article number114110
JournalJournal of Applied Physics
Volume104
Issue number11
DOIs
StatePublished - Dec 1 2008

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barrier layers
calcium
capacitors
engineering
permittivity
copper
microstructure
thin films
grain boundaries
high resistance
space charge
interlayers
film thickness
trends
conduction
predictions

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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abstract = "A peak permittivity greater than 10 000 has been achieved for calcium copper titanate (CCT) thin films by engineering a thin film microstructure that maximizes space charge contributions to polarizability. This permittivity is an order of magnitude greater than previous polycrystalline thin film efforts. This unique microstructure control is accomplished using a chemical solution deposition process flow that produces highly dense parallel layers ∼100 nm in thickness. We observe a thickness dependent permittivity where the entire film thickness constitutes the conducting region of a barrier layer capacitor despite the presence of multiple grain boundaries within that thickness. The model predictions are in good agreement with experimental data and are consistent with existing literature reports. These trends in permittivity with dielectric thickness raise new questions regarding the nature of barrier layers in CCT-and specifically, these results suggest that grain boundaries may not always participate as high resistance interlayers.",
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I Barrier layer mechanism engineering in calcium copper titanate thin film capacitors through microstructure control. / Paisley, E. A.; Losego, M. D.; Aygun, S. M.; Craft, H. S.; Maria, Jon-Paul.

In: Journal of Applied Physics, Vol. 104, No. 11, 114110, 01.12.2008.

Research output: Contribution to journalArticle

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