Identification of a paramagnetic nitrogen dangling bond defect in nitrided silicon dioxide films on silicon

I. A. Chaiyasena, Patrick M. Lenahan, G. J. Dunn

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

We report the first observation of a nitrogen dangling bond center in nitrided thermally grown silicon dioxide films on silicon. Interpretation of the 14N hyperfine parameters indicates that the unpaired electron wave function is strongly localized on the central nitrogen and that the wave function is highly p in character.

Original languageEnglish (US)
Pages (from-to)2141-2143
Number of pages3
JournalApplied Physics Letters
Volume58
Issue number19
DOIs
StatePublished - Dec 1 1991

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wave functions
silicon dioxide
nitrogen
defects
silicon
electrons

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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Identification of a paramagnetic nitrogen dangling bond defect in nitrided silicon dioxide films on silicon. / Chaiyasena, I. A.; Lenahan, Patrick M.; Dunn, G. J.

In: Applied Physics Letters, Vol. 58, No. 19, 01.12.1991, p. 2141-2143.

Research output: Contribution to journalArticle

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