Identification of a silicon vacancy as an important defect in 4H SiC metal oxide semiconducting field effect transistor using spin dependent recombination

C. J. Cochrane, Patrick M. Lenahan, A. J. Lelis

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Abstract

A spin dependent recombination (SDR) spectrum observed in a wide range of SiC metal oxide semiconducting field effect transistors (MOSFETs) has previously been only tentatively linked to a silicon vacancy or vacancy related defect. By resolving hyperfine interactions in SDR detected spectra with 13C nuclei, we provide an extremely strong argument identifying the SDR spectrum with a silicon vacancy. Since the silicon vacancy spectrum dominates the SDR response in a wide variety of SiC MOSFETs, silicon vacancies are quite important traps in this technology.

Original languageEnglish (US)
Article number023509
JournalApplied Physics Letters
Volume100
Issue number2
DOIs
StatePublished - Jan 9 2012

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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