Identification of a silicon vacancy as an important defect in 4H SiC metal oxide semiconducting field effect transistor using spin dependent recombination

C. J. Cochrane, Patrick M. Lenahan, A. J. Lelis

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Abstract

A spin dependent recombination (SDR) spectrum observed in a wide range of SiC metal oxide semiconducting field effect transistors (MOSFETs) has previously been only tentatively linked to a silicon vacancy or vacancy related defect. By resolving hyperfine interactions in SDR detected spectra with 13C nuclei, we provide an extremely strong argument identifying the SDR spectrum with a silicon vacancy. Since the silicon vacancy spectrum dominates the SDR response in a wide variety of SiC MOSFETs, silicon vacancies are quite important traps in this technology.

Original languageEnglish (US)
Article number023509
JournalApplied Physics Letters
Volume100
Issue number2
DOIs
StatePublished - Jan 9 2012

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metal oxides
field effect transistors
defects
silicon
traps
nuclei
interactions

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

@article{78f4cdbdc617408a8d5c38f7e3e644a2,
title = "Identification of a silicon vacancy as an important defect in 4H SiC metal oxide semiconducting field effect transistor using spin dependent recombination",
abstract = "A spin dependent recombination (SDR) spectrum observed in a wide range of SiC metal oxide semiconducting field effect transistors (MOSFETs) has previously been only tentatively linked to a silicon vacancy or vacancy related defect. By resolving hyperfine interactions in SDR detected spectra with 13C nuclei, we provide an extremely strong argument identifying the SDR spectrum with a silicon vacancy. Since the silicon vacancy spectrum dominates the SDR response in a wide variety of SiC MOSFETs, silicon vacancies are quite important traps in this technology.",
author = "Cochrane, {C. J.} and Lenahan, {Patrick M.} and Lelis, {A. J.}",
year = "2012",
month = "1",
day = "9",
doi = "10.1063/1.3675857",
language = "English (US)",
volume = "100",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "2",

}

TY - JOUR

T1 - Identification of a silicon vacancy as an important defect in 4H SiC metal oxide semiconducting field effect transistor using spin dependent recombination

AU - Cochrane, C. J.

AU - Lenahan, Patrick M.

AU - Lelis, A. J.

PY - 2012/1/9

Y1 - 2012/1/9

N2 - A spin dependent recombination (SDR) spectrum observed in a wide range of SiC metal oxide semiconducting field effect transistors (MOSFETs) has previously been only tentatively linked to a silicon vacancy or vacancy related defect. By resolving hyperfine interactions in SDR detected spectra with 13C nuclei, we provide an extremely strong argument identifying the SDR spectrum with a silicon vacancy. Since the silicon vacancy spectrum dominates the SDR response in a wide variety of SiC MOSFETs, silicon vacancies are quite important traps in this technology.

AB - A spin dependent recombination (SDR) spectrum observed in a wide range of SiC metal oxide semiconducting field effect transistors (MOSFETs) has previously been only tentatively linked to a silicon vacancy or vacancy related defect. By resolving hyperfine interactions in SDR detected spectra with 13C nuclei, we provide an extremely strong argument identifying the SDR spectrum with a silicon vacancy. Since the silicon vacancy spectrum dominates the SDR response in a wide variety of SiC MOSFETs, silicon vacancies are quite important traps in this technology.

UR - http://www.scopus.com/inward/record.url?scp=84855978028&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84855978028&partnerID=8YFLogxK

U2 - 10.1063/1.3675857

DO - 10.1063/1.3675857

M3 - Article

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 2

M1 - 023509

ER -