Identification of a three-site defect in semi-insulating 4H-SiC

N. Y. Garces, W. E. Carlos, E. R. Glaser, M. A. Fanton

Research output: Contribution to journalArticlepeer-review

Abstract

Using electron paramagnetic resonance (EPR), we observe a defect that increases significantly with annealing temperature. This spin S = 1 defect is characterized by g x≈ g y≈ g z = 2.0056 and a fine structure splitting D ∼ 100 G whose principal axis lies in a plane perpendicular to the c-axis. Also resolved are several hyperfine interactions with the low abundance 29Si and 13C neighboring nuclei. A careful analysis of the intensity of these hyperfine lines allows a precise determination of the identity and the quantity of interacting nuclei. This center is diamagnetic in the ground state but can be excited into a paramagnetic triplet state by sub-bandgap light. We identify this new defect as a three-site vacancy involving V C-V Si-V C. The angular dependence of the 13C hyperfine interaction supports the proposed model. These may be the simplest of a family of more complex and extended defects that play a role in the semi-insulating (SI) character of SiC.

Original languageEnglish (US)
Pages (from-to)268-271
Number of pages4
JournalJournal of Electronic Materials
Volume36
Issue number4
DOIs
StatePublished - Apr 2007

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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