Identification of atomic-scale defect structure involved in the negative bias temperature instability in plasma-nitrided devices

J. P. Campbell, Patrick M. Lenahan, A. T. Krishnan, S. Krishnan

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We utilize a very sensitive electron spin resonance technique called spin-dependent tunneling to identify defect centers involved in the negative bias temperature instability in plasma-nitrided p -channel metal-oxide-silicon field-effect transistors. The defect's Si29 hyperfine spectrum identifies it as a K center which we refer to as KN. The generation of KN centers provides an explanation for the instability's enhancement in nitrided devices.

Original languageEnglish (US)
Article number133507
JournalApplied Physics Letters
Volume91
Issue number13
DOIs
StatePublished - Oct 5 2007

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defects
silicon transistors
temperature
metal oxides
electron paramagnetic resonance
field effect transistors
augmentation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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Identification of atomic-scale defect structure involved in the negative bias temperature instability in plasma-nitrided devices. / Campbell, J. P.; Lenahan, Patrick M.; Krishnan, A. T.; Krishnan, S.

In: Applied Physics Letters, Vol. 91, No. 13, 133507, 05.10.2007.

Research output: Contribution to journalArticle

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