Identification of deep level defects in SiC bipolar junction transistors

P. M. Lenahan, N. T. Pfeiffenberger, T. G. Pribicko, A. J. Lelis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this study, we report on the observation of recombination center defects in the base of 4H-SiC bipolar junction transistors. The defects are observed through a very sensitive electrically detected electron spin resonance technique called spin dependent recombination. To the best of our knowledge, these results represent the first electron spin resonance results of any kind reported in a fully processed SiC bipolar junction transistor and provide the first direct observations of the chemical and physical nature of recombination centers in SiC bipolar junction transistors. Our results clearly demonstrate the power of SDR techniques in the detection of recombination centers in SiC bipolar junction transistors.

Original languageEnglish (US)
Title of host publicationSilicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005
Pages567-570
Number of pages4
EditionPART 1
StatePublished - Dec 1 2006
EventInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, United States
Duration: Sep 18 2005Sep 23 2005

Publication series

NameMaterials Science Forum
NumberPART 1
Volume527-529
ISSN (Print)0255-5476

Other

OtherInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
CountryUnited States
CityPittsburgh, PA
Period9/18/059/23/05

Fingerprint

Bipolar transistors
Defects
Paramagnetic resonance

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Lenahan, P. M., Pfeiffenberger, N. T., Pribicko, T. G., & Lelis, A. J. (2006). Identification of deep level defects in SiC bipolar junction transistors. In Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005 (PART 1 ed., pp. 567-570). (Materials Science Forum; Vol. 527-529, No. PART 1).
Lenahan, P. M. ; Pfeiffenberger, N. T. ; Pribicko, T. G. ; Lelis, A. J. / Identification of deep level defects in SiC bipolar junction transistors. Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1. ed. 2006. pp. 567-570 (Materials Science Forum; PART 1).
@inproceedings{e10148407be14ee88a05d6134bdb72a9,
title = "Identification of deep level defects in SiC bipolar junction transistors",
abstract = "In this study, we report on the observation of recombination center defects in the base of 4H-SiC bipolar junction transistors. The defects are observed through a very sensitive electrically detected electron spin resonance technique called spin dependent recombination. To the best of our knowledge, these results represent the first electron spin resonance results of any kind reported in a fully processed SiC bipolar junction transistor and provide the first direct observations of the chemical and physical nature of recombination centers in SiC bipolar junction transistors. Our results clearly demonstrate the power of SDR techniques in the detection of recombination centers in SiC bipolar junction transistors.",
author = "Lenahan, {P. M.} and Pfeiffenberger, {N. T.} and Pribicko, {T. G.} and Lelis, {A. J.}",
year = "2006",
month = "12",
day = "1",
language = "English (US)",
isbn = "9780878494255",
series = "Materials Science Forum",
number = "PART 1",
pages = "567--570",
booktitle = "Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005",
edition = "PART 1",

}

Lenahan, PM, Pfeiffenberger, NT, Pribicko, TG & Lelis, AJ 2006, Identification of deep level defects in SiC bipolar junction transistors. in Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1 edn, Materials Science Forum, no. PART 1, vol. 527-529, pp. 567-570, International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005), Pittsburgh, PA, United States, 9/18/05.

Identification of deep level defects in SiC bipolar junction transistors. / Lenahan, P. M.; Pfeiffenberger, N. T.; Pribicko, T. G.; Lelis, A. J.

Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1. ed. 2006. p. 567-570 (Materials Science Forum; Vol. 527-529, No. PART 1).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Identification of deep level defects in SiC bipolar junction transistors

AU - Lenahan, P. M.

AU - Pfeiffenberger, N. T.

AU - Pribicko, T. G.

AU - Lelis, A. J.

PY - 2006/12/1

Y1 - 2006/12/1

N2 - In this study, we report on the observation of recombination center defects in the base of 4H-SiC bipolar junction transistors. The defects are observed through a very sensitive electrically detected electron spin resonance technique called spin dependent recombination. To the best of our knowledge, these results represent the first electron spin resonance results of any kind reported in a fully processed SiC bipolar junction transistor and provide the first direct observations of the chemical and physical nature of recombination centers in SiC bipolar junction transistors. Our results clearly demonstrate the power of SDR techniques in the detection of recombination centers in SiC bipolar junction transistors.

AB - In this study, we report on the observation of recombination center defects in the base of 4H-SiC bipolar junction transistors. The defects are observed through a very sensitive electrically detected electron spin resonance technique called spin dependent recombination. To the best of our knowledge, these results represent the first electron spin resonance results of any kind reported in a fully processed SiC bipolar junction transistor and provide the first direct observations of the chemical and physical nature of recombination centers in SiC bipolar junction transistors. Our results clearly demonstrate the power of SDR techniques in the detection of recombination centers in SiC bipolar junction transistors.

UR - http://www.scopus.com/inward/record.url?scp=37849044567&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=37849044567&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:37849044567

SN - 9780878494255

T3 - Materials Science Forum

SP - 567

EP - 570

BT - Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005

ER -

Lenahan PM, Pfeiffenberger NT, Pribicko TG, Lelis AJ. Identification of deep level defects in SiC bipolar junction transistors. In Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1 ed. 2006. p. 567-570. (Materials Science Forum; PART 1).