Identification of the microscopic structure of new hot carrier damage centers in short channel MOSFETs

C. A. Billman, Patrick M. Lenahan, W. Weber

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

We show, for the first time, that E′ like centers can be generated in hot hole stressing of short channel metal oxide silicon field effect transistors (MOSFETs). Prior to this study only Pb centers had been directly linked to this stressing phenomenon.

Original languageEnglish (US)
Pages (from-to)181-184
Number of pages4
JournalMaterials Research Society Symposium - Proceedings
Volume473
StatePublished - Dec 1 1997
EventProceedings of the 1997 MRS Spring Symposium - San Francisco, CA, USA
Duration: Mar 31 1997Apr 3 1997

Fingerprint

silicon transistors
Hot carriers
Silicon oxides
Field effect transistors
metal oxides
field effect transistors
Metals
damage

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

Cite this

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title = "Identification of the microscopic structure of new hot carrier damage centers in short channel MOSFETs",
abstract = "We show, for the first time, that E′ like centers can be generated in hot hole stressing of short channel metal oxide silicon field effect transistors (MOSFETs). Prior to this study only Pb centers had been directly linked to this stressing phenomenon.",
author = "Billman, {C. A.} and Lenahan, {Patrick M.} and W. Weber",
year = "1997",
month = "12",
day = "1",
language = "English (US)",
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pages = "181--184",
journal = "Materials Research Society Symposium - Proceedings",
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Identification of the microscopic structure of new hot carrier damage centers in short channel MOSFETs. / Billman, C. A.; Lenahan, Patrick M.; Weber, W.

In: Materials Research Society Symposium - Proceedings, Vol. 473, 01.12.1997, p. 181-184.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Identification of the microscopic structure of new hot carrier damage centers in short channel MOSFETs

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AU - Lenahan, Patrick M.

AU - Weber, W.

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Y1 - 1997/12/1

N2 - We show, for the first time, that E′ like centers can be generated in hot hole stressing of short channel metal oxide silicon field effect transistors (MOSFETs). Prior to this study only Pb centers had been directly linked to this stressing phenomenon.

AB - We show, for the first time, that E′ like centers can be generated in hot hole stressing of short channel metal oxide silicon field effect transistors (MOSFETs). Prior to this study only Pb centers had been directly linked to this stressing phenomenon.

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JO - Materials Research Society Symposium - Proceedings

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