Identification of the microscopic structure of new hot carrier damage centers in short channel MOSFETs

C. A. Billman, P. M. Lenahan, W. Weber

Research output: Contribution to journalConference article

1 Scopus citations

Abstract

We show, for the first time, that E′ like centers can be generated in hot hole stressing of short channel metal oxide silicon field effect transistors (MOSFETs). Prior to this study only Pb centers had been directly linked to this stressing phenomenon.

Original languageEnglish (US)
Pages (from-to)181-184
Number of pages4
JournalMaterials Research Society Symposium - Proceedings
Volume473
DOIs
StatePublished - Jan 1 1997
EventProceedings of the 1997 MRS Spring Symposium - San Francisco, CA, USA
Duration: Mar 31 1997Apr 3 1997

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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