Identification of the microscopic structure of new hot carrier damage centers in short channel MOSFETs

C. A. Billman, P. M. Lenahan, W. Weber

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

We show, for the first time, that E' centers can be generated in hot hole stressing of short channel metal oxide silicon field effect transistors (MOSFETs). Prior to this study only Pb centers had been directly linked to this stressing phenomena.

Original languageEnglish (US)
Pages (from-to)271-274
Number of pages4
JournalMicroelectronic Engineering
Volume36
Issue number1-4
DOIs
StatePublished - Jun 1997

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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