Abstract
Leakage currents in dielectric thin films are important reliability concerns. We show that two techniques are sensitive to and can probe structural information about the atomic scale defect centers that are responsible for leakage currents in technologically important thin films. We investigate leakage currents in a-SiN:H thin films with both electrically detected magnetic resonance (EDMR) and near-zero field magnetoresistance (NZFMR). In all measurements, the linewidth of the EDMR/NZFMR response is a function of the N/Si ratio of the film; the width provides information about the leakage defect structure. The NZFMR measurement provides the possibility of combining the sensitivity and at least some of the analytical power of EDMR with the simplicity of an apparatus that could potentially be implemented during fabrication of devices.
| Original language | English (US) |
|---|---|
| Title of host publication | 2018 IEEE International Integrated Reliability Workshop, IIRW 2018 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| ISBN (Electronic) | 9781538660393 |
| DOIs | |
| State | Published - Oct 1 2018 |
| Event | 2018 IEEE International Integrated Reliability Workshop, IIRW 2018 - South Lake Tahoe, United States Duration: Oct 7 2018 → Oct 11 2018 |
Publication series
| Name | IEEE International Integrated Reliability Workshop Final Report |
|---|---|
| Volume | 2018-October |
Conference
| Conference | 2018 IEEE International Integrated Reliability Workshop, IIRW 2018 |
|---|---|
| Country | United States |
| City | South Lake Tahoe |
| Period | 10/7/18 → 10/11/18 |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Safety, Risk, Reliability and Quality
- Electronic, Optical and Magnetic Materials
Cite this
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Identifying defects responsible for leakage currents in thin dielectric films. / Waskiewicz, Ryan J.; Frantz, Elias B.; Lenahan, Patrick M.; King, Sean W.; Harmon, Nicholas J.; Flatte, Michael E.
2018 IEEE International Integrated Reliability Workshop, IIRW 2018. Institute of Electrical and Electronics Engineers Inc., 2018. 8727077 (IEEE International Integrated Reliability Workshop Final Report; Vol. 2018-October).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Identifying defects responsible for leakage currents in thin dielectric films
AU - Waskiewicz, Ryan J.
AU - Frantz, Elias B.
AU - Lenahan, Patrick M.
AU - King, Sean W.
AU - Harmon, Nicholas J.
AU - Flatte, Michael E.
PY - 2018/10/1
Y1 - 2018/10/1
N2 - Leakage currents in dielectric thin films are important reliability concerns. We show that two techniques are sensitive to and can probe structural information about the atomic scale defect centers that are responsible for leakage currents in technologically important thin films. We investigate leakage currents in a-SiN:H thin films with both electrically detected magnetic resonance (EDMR) and near-zero field magnetoresistance (NZFMR). In all measurements, the linewidth of the EDMR/NZFMR response is a function of the N/Si ratio of the film; the width provides information about the leakage defect structure. The NZFMR measurement provides the possibility of combining the sensitivity and at least some of the analytical power of EDMR with the simplicity of an apparatus that could potentially be implemented during fabrication of devices.
AB - Leakage currents in dielectric thin films are important reliability concerns. We show that two techniques are sensitive to and can probe structural information about the atomic scale defect centers that are responsible for leakage currents in technologically important thin films. We investigate leakage currents in a-SiN:H thin films with both electrically detected magnetic resonance (EDMR) and near-zero field magnetoresistance (NZFMR). In all measurements, the linewidth of the EDMR/NZFMR response is a function of the N/Si ratio of the film; the width provides information about the leakage defect structure. The NZFMR measurement provides the possibility of combining the sensitivity and at least some of the analytical power of EDMR with the simplicity of an apparatus that could potentially be implemented during fabrication of devices.
UR - http://www.scopus.com/inward/record.url?scp=85067631600&partnerID=8YFLogxK
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U2 - 10.1109/IIRW.2018.8727077
DO - 10.1109/IIRW.2018.8727077
M3 - Conference contribution
T3 - IEEE International Integrated Reliability Workshop Final Report
BT - 2018 IEEE International Integrated Reliability Workshop, IIRW 2018
PB - Institute of Electrical and Electronics Engineers Inc.
ER -