IIA-9 Undoped SiGe Heterostructure Field Effect Transistors

T. N. Jackson, S. F. Nelson, J. O. Chu, B. S. Meyerson, Thomas Nelson Jackson

Research output: Contribution to journalArticle

7 Citations (Scopus)
Original languageEnglish (US)
Pages (from-to)2104-2105
Number of pages2
JournalIEEE Transactions on Electron Devices
Volume40
Issue number11
DOIs
StatePublished - Jan 1 1993

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Jackson, T. N. ; Nelson, S. F. ; Chu, J. O. ; Meyerson, B. S. ; Jackson, Thomas Nelson. / IIA-9 Undoped SiGe Heterostructure Field Effect Transistors. In: IEEE Transactions on Electron Devices. 1993 ; Vol. 40, No. 11. pp. 2104-2105.
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IIA-9 Undoped SiGe Heterostructure Field Effect Transistors. / Jackson, T. N.; Nelson, S. F.; Chu, J. O.; Meyerson, B. S.; Jackson, Thomas Nelson.

In: IEEE Transactions on Electron Devices, Vol. 40, No. 11, 01.01.1993, p. 2104-2105.

Research output: Contribution to journalArticle

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