IIIB-5 High-Transconductance InGaAs/InAlAs SISFET'S

Thomas Nelson Jackson, P. M. Solomon, M. A. Tischler, G. D. Pettit, F. J. Canora, J. F. DeGelormo, J. J. Bucchignano, S. J. Wind

Research output: Contribution to journalArticle

2 Citations (Scopus)
Original languageEnglish (US)
Pages (from-to)2703-2704
Number of pages2
JournalIEEE Transactions on Electron Devices
Volume38
Issue number12
DOIs
StatePublished - Jan 1 1991

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Semiconducting indium compounds
Transconductance
transconductance

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)

Cite this

Jackson, T. N., Solomon, P. M., Tischler, M. A., Pettit, G. D., Canora, F. J., DeGelormo, J. F., ... Wind, S. J. (1991). IIIB-5 High-Transconductance InGaAs/InAlAs SISFET'S. IEEE Transactions on Electron Devices, 38(12), 2703-2704. https://doi.org/10.1109/16.158725
Jackson, Thomas Nelson ; Solomon, P. M. ; Tischler, M. A. ; Pettit, G. D. ; Canora, F. J. ; DeGelormo, J. F. ; Bucchignano, J. J. ; Wind, S. J. / IIIB-5 High-Transconductance InGaAs/InAlAs SISFET'S. In: IEEE Transactions on Electron Devices. 1991 ; Vol. 38, No. 12. pp. 2703-2704.
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Jackson, TN, Solomon, PM, Tischler, MA, Pettit, GD, Canora, FJ, DeGelormo, JF, Bucchignano, JJ & Wind, SJ 1991, 'IIIB-5 High-Transconductance InGaAs/InAlAs SISFET'S', IEEE Transactions on Electron Devices, vol. 38, no. 12, pp. 2703-2704. https://doi.org/10.1109/16.158725

IIIB-5 High-Transconductance InGaAs/InAlAs SISFET'S. / Jackson, Thomas Nelson; Solomon, P. M.; Tischler, M. A.; Pettit, G. D.; Canora, F. J.; DeGelormo, J. F.; Bucchignano, J. J.; Wind, S. J.

In: IEEE Transactions on Electron Devices, Vol. 38, No. 12, 01.01.1991, p. 2703-2704.

Research output: Contribution to journalArticle

TY - JOUR

T1 - IIIB-5 High-Transconductance InGaAs/InAlAs SISFET'S

AU - Jackson, Thomas Nelson

AU - Solomon, P. M.

AU - Tischler, M. A.

AU - Pettit, G. D.

AU - Canora, F. J.

AU - DeGelormo, J. F.

AU - Bucchignano, J. J.

AU - Wind, S. J.

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

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Jackson TN, Solomon PM, Tischler MA, Pettit GD, Canora FJ, DeGelormo JF et al. IIIB-5 High-Transconductance InGaAs/InAlAs SISFET'S. IEEE Transactions on Electron Devices. 1991 Jan 1;38(12):2703-2704. https://doi.org/10.1109/16.158725