Imaging, structural and chemical analysis of silicon nanowires

R. J. Barsotti, J. E. Fischer, C. H. Lee, J. Mahmood, C. K.W. Adu, P. C. Eklund

Research output: Contribution to journalConference article

1 Scopus citations

Abstract

Laser ablation has been used to grow silicon nanowires with an average diameter of 6.7 nm ± 2.7 nm surrounded by an amorphous SiOx sheath of 1-2 nm. This paper reports the imaging, chemical and structural analysis of these wires. Due to the growth temperature and the presence of calcium impurities and trace oxygen, two distinct types of wires are found. They appear to grow by two different processes. One requires a metal catalyst, the other is catalyzed by oxygen.

Original languageEnglish (US)
Pages (from-to)627-631
Number of pages5
JournalMaterials Research Society Symposium - Proceedings
Volume737
StatePublished - Jul 25 2003
EventQuantum Confined Semiconductor Nanostructures - Boston MA, United States
Duration: Dec 2 2002Dec 5 2002

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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    Barsotti, R. J., Fischer, J. E., Lee, C. H., Mahmood, J., Adu, C. K. W., & Eklund, P. C. (2003). Imaging, structural and chemical analysis of silicon nanowires. Materials Research Society Symposium - Proceedings, 737, 627-631.