Immobilization of glucose oxidase on ZnO nanorods decorated electrolyte-gated field effect transistor for glucose detection

M. Fathollahzadeh, M. Hosseini, M. Norouzi, Seyedehaida Ebrahimi, M. Fathipour, M. Kolahdouz, B. Haghighi

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

In this paper, we report on growth of ZnO nanorods on the surface of gold interdigital electrodes and its implementation as a conductive n-type channel for the fabrication of a liquid-gated field effect transistor. Glucose oxidase was immobilized on the surface of the ZnO nanorods and the fabricated device was used as a four-electrode glucose biosensor. The resistance of the conductive channel was affected by addition of glucose. The applied bias voltage to the gate in the fabricated device affects the channel resistance in the same manner as the increase of enzymatic products during the glucose oxidation. Large effective area, good conductivity, and biocompatibility properties of ZnO nanorods are the key features in this highly sensitive and stable biosensor. Our measurements showed that the threshold voltage of transistor was about 0.75 V. The current increased in the presence of the glucose and exhibited a dynamic linear range with the logarithm of glucose concentration in the range between 0.01 and 5 mM. The detection limit was about 3.8 μM.

Original languageEnglish (US)
Pages (from-to)61-67
Number of pages7
JournalJournal of Solid State Electrochemistry
Volume22
Issue number1
DOIs
StatePublished - Jan 1 2018

Fingerprint

Glucose Oxidase
Glucose oxidase
oxidase
Field effect transistors
Nanorods
immobilization
glucose
Electrolytes
nanorods
Glucose
field effect transistors
electrolytes
Biosensors
bioinstrumentation
Electrodes
Bias voltage
Threshold voltage
Biocompatibility
electrodes
Gold

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

Fathollahzadeh, M. ; Hosseini, M. ; Norouzi, M. ; Ebrahimi, Seyedehaida ; Fathipour, M. ; Kolahdouz, M. ; Haghighi, B. / Immobilization of glucose oxidase on ZnO nanorods decorated electrolyte-gated field effect transistor for glucose detection. In: Journal of Solid State Electrochemistry. 2018 ; Vol. 22, No. 1. pp. 61-67.
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Immobilization of glucose oxidase on ZnO nanorods decorated electrolyte-gated field effect transistor for glucose detection. / Fathollahzadeh, M.; Hosseini, M.; Norouzi, M.; Ebrahimi, Seyedehaida; Fathipour, M.; Kolahdouz, M.; Haghighi, B.

In: Journal of Solid State Electrochemistry, Vol. 22, No. 1, 01.01.2018, p. 61-67.

Research output: Contribution to journalArticle

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T1 - Immobilization of glucose oxidase on ZnO nanorods decorated electrolyte-gated field effect transistor for glucose detection

AU - Fathollahzadeh, M.

AU - Hosseini, M.

AU - Norouzi, M.

AU - Ebrahimi, Seyedehaida

AU - Fathipour, M.

AU - Kolahdouz, M.

AU - Haghighi, B.

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N2 - In this paper, we report on growth of ZnO nanorods on the surface of gold interdigital electrodes and its implementation as a conductive n-type channel for the fabrication of a liquid-gated field effect transistor. Glucose oxidase was immobilized on the surface of the ZnO nanorods and the fabricated device was used as a four-electrode glucose biosensor. The resistance of the conductive channel was affected by addition of glucose. The applied bias voltage to the gate in the fabricated device affects the channel resistance in the same manner as the increase of enzymatic products during the glucose oxidation. Large effective area, good conductivity, and biocompatibility properties of ZnO nanorods are the key features in this highly sensitive and stable biosensor. Our measurements showed that the threshold voltage of transistor was about 0.75 V. The current increased in the presence of the glucose and exhibited a dynamic linear range with the logarithm of glucose concentration in the range between 0.01 and 5 mM. The detection limit was about 3.8 μM.

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