Impact of changes in the Pt heterostructure bottom electrodes on the ferroelectric properties of SBT thin films

Seung Hyun Kim, D. J. Kim, J. Im, S. K. Streiffer, O. Auciello, J. P. Maria, A. I. Kingon

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations

Abstract

The crystallinity and the microstructure of Sr0.8Bi2.3Ta2O9 (SBT) thin films improved with increasing annealing temperature, and strongly influenced the ferroelectric properties. In addition, the properties of SBT films, such as remanent polarization and leakage current density, are closely related to the film/electrode interface and surface roughness of the underlying electrode. SBT films on Pt/TiO2/SiO2/Si and Pt/ZrO2/SiO2/Si substrates exhibited high remanent polarization, low leakage current density, and low voltage saturation as compared to SBT films on Pt/Ti/SiO2Si substrates. This is deduced to be related to differences in film orientation, electrode roughness, and out-diffusion of Ti onto the surface of the bottom electrode.

Original languageEnglish (US)
Pages (from-to)253-268
Number of pages16
JournalIntegrated Ferroelectrics
Volume26
Issue number1
DOIs
StatePublished - 1999
EventThe 11th International Symposium on Integrated Ferroelectrics (ISIF99) - Colorado Springs, CO, USA
Duration: Mar 7 1999Mar 10 1999

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Control and Systems Engineering
  • Ceramics and Composites
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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