Impact of copper overpressure on the synthesis of hexagonal boron nitride atomic layers

Michael S. Bresnehan, Ganesh R. Bhimanapati, Ke Wang, David W. Snyder, Joshua Alexander Robinson

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

Hexagonal boron nitride (h-BN) atomic layers are synthesized on polycrystalline copper foils via a novel chemical vapor deposition (CVD) process that maintains a vapor-phase copper overpressure during growth. Compared to h-BN films grown without a copper overpressure, this process results in a >10× reduction of 3-dimensional BN fullerene-like surface features, a reduction of carbon and oxygen contamination of 65% and 62%, respectively, an increase in h-BN grain size of >2×, and an 89% increase in electrical breakdown strength.

Original languageEnglish (US)
Pages (from-to)16755-16762
Number of pages8
JournalACS Applied Materials and Interfaces
Volume6
Issue number19
DOIs
StatePublished - Oct 8 2014

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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