Impact of copper overpressure on the synthesis of hexagonal boron nitride atomic layers

Michael S. Bresnehan, Ganesh R. Bhimanapati, Ke Wang, David W. Snyder, Joshua Alexander Robinson

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Hexagonal boron nitride (h-BN) atomic layers are synthesized on polycrystalline copper foils via a novel chemical vapor deposition (CVD) process that maintains a vapor-phase copper overpressure during growth. Compared to h-BN films grown without a copper overpressure, this process results in a >10× reduction of 3-dimensional BN fullerene-like surface features, a reduction of carbon and oxygen contamination of 65% and 62%, respectively, an increase in h-BN grain size of >2×, and an 89% increase in electrical breakdown strength.

Original languageEnglish (US)
Pages (from-to)16755-16762
Number of pages8
JournalACS Applied Materials and Interfaces
Volume6
Issue number19
DOIs
StatePublished - Oct 8 2014

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Boron nitride
Copper
Fullerenes
Metal foil
Chemical vapor deposition
Contamination
Carbon
Vapors
Oxygen
boron nitride

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

@article{947d432980ce45a1974eb8e977e3ab84,
title = "Impact of copper overpressure on the synthesis of hexagonal boron nitride atomic layers",
abstract = "Hexagonal boron nitride (h-BN) atomic layers are synthesized on polycrystalline copper foils via a novel chemical vapor deposition (CVD) process that maintains a vapor-phase copper overpressure during growth. Compared to h-BN films grown without a copper overpressure, this process results in a >10× reduction of 3-dimensional BN fullerene-like surface features, a reduction of carbon and oxygen contamination of 65{\%} and 62{\%}, respectively, an increase in h-BN grain size of >2×, and an 89{\%} increase in electrical breakdown strength.",
author = "Bresnehan, {Michael S.} and Bhimanapati, {Ganesh R.} and Ke Wang and Snyder, {David W.} and Robinson, {Joshua Alexander}",
year = "2014",
month = "10",
day = "8",
doi = "10.1021/am503844u",
language = "English (US)",
volume = "6",
pages = "16755--16762",
journal = "ACS applied materials & interfaces",
issn = "1944-8244",
publisher = "American Chemical Society",
number = "19",

}

Impact of copper overpressure on the synthesis of hexagonal boron nitride atomic layers. / Bresnehan, Michael S.; Bhimanapati, Ganesh R.; Wang, Ke; Snyder, David W.; Robinson, Joshua Alexander.

In: ACS Applied Materials and Interfaces, Vol. 6, No. 19, 08.10.2014, p. 16755-16762.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Impact of copper overpressure on the synthesis of hexagonal boron nitride atomic layers

AU - Bresnehan, Michael S.

AU - Bhimanapati, Ganesh R.

AU - Wang, Ke

AU - Snyder, David W.

AU - Robinson, Joshua Alexander

PY - 2014/10/8

Y1 - 2014/10/8

N2 - Hexagonal boron nitride (h-BN) atomic layers are synthesized on polycrystalline copper foils via a novel chemical vapor deposition (CVD) process that maintains a vapor-phase copper overpressure during growth. Compared to h-BN films grown without a copper overpressure, this process results in a >10× reduction of 3-dimensional BN fullerene-like surface features, a reduction of carbon and oxygen contamination of 65% and 62%, respectively, an increase in h-BN grain size of >2×, and an 89% increase in electrical breakdown strength.

AB - Hexagonal boron nitride (h-BN) atomic layers are synthesized on polycrystalline copper foils via a novel chemical vapor deposition (CVD) process that maintains a vapor-phase copper overpressure during growth. Compared to h-BN films grown without a copper overpressure, this process results in a >10× reduction of 3-dimensional BN fullerene-like surface features, a reduction of carbon and oxygen contamination of 65% and 62%, respectively, an increase in h-BN grain size of >2×, and an 89% increase in electrical breakdown strength.

UR - http://www.scopus.com/inward/record.url?scp=84907887470&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84907887470&partnerID=8YFLogxK

U2 - 10.1021/am503844u

DO - 10.1021/am503844u

M3 - Article

AN - SCOPUS:84907887470

VL - 6

SP - 16755

EP - 16762

JO - ACS applied materials & interfaces

JF - ACS applied materials & interfaces

SN - 1944-8244

IS - 19

ER -