Impact of dopants in GaN on the formation of two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors

R. M. Chu, Y. D. Zheng, Y. G. Zhou, P. Han, B. Shen, S. L. Gu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The two-dimensional electron gas distribution in AlGaN/GaN high electron mobility transistors is determined from the solution of the coupled Schrödinger's and Poisson's equations. Considering the piezoelectric effect, the two-dimensional electron gas concentration is calculated to be as high as 7.7 × 1019 cm-3. In order to obtain an understanding of how the two-dimensional electron gas distribution is influenced by dopants in GaN, we observed the two-dimensional electron gas concentration and occupation of sub-bands versus dopant concentration in the GaN layer of an AlGaN/GaN heterostructure. Our results show that the two-dimensional electron gas concentration is slightly increased at higher doping levels in GaN, while the quantum confinement in the AlGaN/GaN heterostructure is weakened with the increase of donor concentration in the GaN layer.

Original languageEnglish (US)
Pages (from-to)387-389
Number of pages3
JournalApplied Physics A: Materials Science and Processing
Volume75
Issue number3
DOIs
StatePublished - Sep 1 2002

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Two dimensional electron gas
High electron mobility transistors
Doping (additives)
Heterojunctions
Quantum confinement
Piezoelectricity
Poisson equation
aluminum gallium nitride

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)

Cite this

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title = "Impact of dopants in GaN on the formation of two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors",
abstract = "The two-dimensional electron gas distribution in AlGaN/GaN high electron mobility transistors is determined from the solution of the coupled Schr{\"o}dinger's and Poisson's equations. Considering the piezoelectric effect, the two-dimensional electron gas concentration is calculated to be as high as 7.7 × 1019 cm-3. In order to obtain an understanding of how the two-dimensional electron gas distribution is influenced by dopants in GaN, we observed the two-dimensional electron gas concentration and occupation of sub-bands versus dopant concentration in the GaN layer of an AlGaN/GaN heterostructure. Our results show that the two-dimensional electron gas concentration is slightly increased at higher doping levels in GaN, while the quantum confinement in the AlGaN/GaN heterostructure is weakened with the increase of donor concentration in the GaN layer.",
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Impact of dopants in GaN on the formation of two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors. / Chu, R. M.; Zheng, Y. D.; Zhou, Y. G.; Han, P.; Shen, B.; Gu, S. L.

In: Applied Physics A: Materials Science and Processing, Vol. 75, No. 3, 01.09.2002, p. 387-389.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Impact of dopants in GaN on the formation of two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors

AU - Chu, R. M.

AU - Zheng, Y. D.

AU - Zhou, Y. G.

AU - Han, P.

AU - Shen, B.

AU - Gu, S. L.

PY - 2002/9/1

Y1 - 2002/9/1

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AB - The two-dimensional electron gas distribution in AlGaN/GaN high electron mobility transistors is determined from the solution of the coupled Schrödinger's and Poisson's equations. Considering the piezoelectric effect, the two-dimensional electron gas concentration is calculated to be as high as 7.7 × 1019 cm-3. In order to obtain an understanding of how the two-dimensional electron gas distribution is influenced by dopants in GaN, we observed the two-dimensional electron gas concentration and occupation of sub-bands versus dopant concentration in the GaN layer of an AlGaN/GaN heterostructure. Our results show that the two-dimensional electron gas concentration is slightly increased at higher doping levels in GaN, while the quantum confinement in the AlGaN/GaN heterostructure is weakened with the increase of donor concentration in the GaN layer.

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