Impact of hydrogen plasma treatment on gettering by he implantation-induced cavities in silicon

D. Alquier, E. Ntsoenzok, C. L. Liu, A. Vengurlekar, S Ashok

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

The use of gettering techniques, with precise location of the gettering regions, has become crucial for device manufacturing. Helium-induced cavities have been shown to getter metallic impurities very effectively, but suffer from the drawback of requiring relatively high He doses. In this work, He-implanted Cz wafers of varying resistivity were subjected to hydrogen plasma hydrogenation prior to the cavity-formation anneal. We focus our studies on the cavity layer interactions with metal impurities. XTEM images reveal that hydrogenation increases the cavity radius. Our SIMS results show that the doping level has no influence on the metal gettering efficiency while the addition of plasma hydrogenation tends to decrease it. However, the efficiency can be controlled with the cavity radius which is interesting for future applications of the technique.

Original languageEnglish (US)
Pages (from-to)55-60
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume813
StatePublished - Dec 1 2004
EventHydrogen in Semiconductors - San Francisco, CA, United States
Duration: Apr 13 2004Apr 15 2004

Fingerprint

hydrogen plasma
Silicon
Hydrogenation
Hydrogen
implantation
Plasmas
cavities
hydrogenation
silicon
Metals
Impurities
Helium
Secondary ion mass spectrometry
impurities
Doping (additives)
radii
metals
secondary ion mass spectrometry
manufacturing
helium

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Alquier, D. ; Ntsoenzok, E. ; Liu, C. L. ; Vengurlekar, A. ; Ashok, S. / Impact of hydrogen plasma treatment on gettering by he implantation-induced cavities in silicon. In: Materials Research Society Symposium Proceedings. 2004 ; Vol. 813. pp. 55-60.
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Impact of hydrogen plasma treatment on gettering by he implantation-induced cavities in silicon. / Alquier, D.; Ntsoenzok, E.; Liu, C. L.; Vengurlekar, A.; Ashok, S.

In: Materials Research Society Symposium Proceedings, Vol. 813, 01.12.2004, p. 55-60.

Research output: Contribution to journalConference article

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T1 - Impact of hydrogen plasma treatment on gettering by he implantation-induced cavities in silicon

AU - Alquier, D.

AU - Ntsoenzok, E.

AU - Liu, C. L.

AU - Vengurlekar, A.

AU - Ashok, S

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AB - The use of gettering techniques, with precise location of the gettering regions, has become crucial for device manufacturing. Helium-induced cavities have been shown to getter metallic impurities very effectively, but suffer from the drawback of requiring relatively high He doses. In this work, He-implanted Cz wafers of varying resistivity were subjected to hydrogen plasma hydrogenation prior to the cavity-formation anneal. We focus our studies on the cavity layer interactions with metal impurities. XTEM images reveal that hydrogenation increases the cavity radius. Our SIMS results show that the doping level has no influence on the metal gettering efficiency while the addition of plasma hydrogenation tends to decrease it. However, the efficiency can be controlled with the cavity radius which is interesting for future applications of the technique.

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