Impact of sidewall passivation and channel composition on InxGa1-xAs FinFET performance

Arun V. Thathachary, Guy Lavallee, Mirco Cantoro, Krishna K. Bhuwalka, Yeon Cheol Heo, Shigenobu Maeda, Suman Datta

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Abstract

We experimentally demonstrate InxGa1-xAs FinFET devices with varying indium composition and quantum confinement effect. While increasing indium content enhances drive current by increasing the injection velocity, increasing quantum confinement enhances the drive currents by significantly improving the short-channel effects. Further, improved sidewall passivation using an in situ plasma nitride passivation process provides additional improved subthreshold behavior. Competitive drive currents are obtained with FinFETs realized through a scaled fin pitch process allowing 10-fins/μm layout width at a fin width of 20 nm. We report field effect mobility from multifin split-capacitance-voltage (split-CV) measurements having peak mobility of 3480 cm2/V·s for a 10-nm QW FinFET with 70% indium. Peak transconductance (gmmax) of 1.62 mS/μm, normalized to circumference, is demonstrated for devices with LG=120 nm.

Original languageEnglish (US)
Article number6991559
Pages (from-to)117-119
Number of pages3
JournalIEEE Electron Device Letters
Volume36
Issue number2
DOIs
StatePublished - Feb 1 2015

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Thathachary, A. V., Lavallee, G., Cantoro, M., Bhuwalka, K. K., Heo, Y. C., Maeda, S., & Datta, S. (2015). Impact of sidewall passivation and channel composition on InxGa1-xAs FinFET performance. IEEE Electron Device Letters, 36(2), 117-119. [6991559]. https://doi.org/10.1109/LED.2014.2384280