Impact of single trap random telegraph noise on heterojunction TFET SRAM stability

Rahul Pandey, Vinay Saripalli, Jaydeep P. Kulkarni, Vijaykrishnan Narayanan, Suman Datta

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

We investigate the effect of a single charge trap random telegraph noise (RTN)-induced degradation in III-V heterojunction tunnel FET (HTFET)-based SRAM. Our analysis focuses on Schmitt trigger (ST) mechanism-based variation tolerant ten-transistor SRAM. We compare iso-area SRAM cell configurations in Si-FinFET and HTFET. Our results show that HTFET ST SRAMs provide significant energy/performance enhancements even in the presence of RTN. For sub-0.2 V operation (Vcc), HTFET ST SRAM offers 15% improvement in read-write noise margins along with better variation immunity from RTN over Si-FinFET ST SRAM. A comparison with iso-area 6T Si-FinFET SRAM with wider size transistors shows 43% improved read noise margin in 10T HTFET ST SRAM at Vcc=0.175~V. In addition, HTFET ST SRAM exhibits 48X lower read access delay and 1.5X reduced power consumption over Si-FinFET ST SRAM operating at their respective Vcc-min.

Original languageEnglish (US)
Article number6720185
Pages (from-to)393-395
Number of pages3
JournalIEEE Electron Device Letters
Volume35
Issue number3
DOIs
StatePublished - Mar 2014

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Impact of single trap random telegraph noise on heterojunction TFET SRAM stability'. Together they form a unique fingerprint.

  • Cite this