Impact of total and partial dipole switching on the switching slope of gate-last negative capacitance FETs with ferroelectric hafnium zirconium oxide gate stack

P. Sharma, K. Tapily, A. K. Saha, J. Zhang, A. Shaughnessy, A. Aziz, G. L. Snider, Sumeet Kumar Gupta, R. D. Clark, S. Datta

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    37 Citations (Scopus)

    Abstract

    We report, for the first time, a gate last process, used to fabricate Negative Capacitance field effect transistors (NCFETs) with Hf0.5Zr0.5O2 (HZO) as ferroelectric (FE) dielectric in a metal/ferroelectric/insulator/semiconductor (MFIS) configuration. Long channel NCFET's with HZO thickness down to 5 nm exhibit consistent switching behavior with switching slope (SSrev) below kT/q over four decades of drain current. Temperature dependent transport study shows that, the effective mobility of HZO NCFETs is 15 % higher than that of HfO2 based control MOSFETs due to suppression of Hf diffusion into the interfacial SiO2 layer (IL). Using the Preisach hysteresis model, which models dynamics of FE switching through a cluster of independent switching dipoles at arbitrary electric field, we (a) explain the asymmetric SS behavior of NCFETs in MFIS configuration, and (b) establish design guidelines for achieving sub-kT/q SS in both forward and reverse sweep direction.

    Original languageEnglish (US)
    Title of host publication2017 Symposium on VLSI Technology, VLSI Technology 2017
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    PagesT154-T155
    ISBN (Electronic)9784863486058
    DOIs
    StatePublished - Jul 31 2017
    Event37th Symposium on VLSI Technology, VLSI Technology 2017 - Kyoto, Japan
    Duration: Jun 5 2017Jun 8 2017

    Publication series

    NameDigest of Technical Papers - Symposium on VLSI Technology
    ISSN (Print)0743-1562

    Other

    Other37th Symposium on VLSI Technology, VLSI Technology 2017
    CountryJapan
    CityKyoto
    Period6/5/176/8/17

    Fingerprint

    Hafnium
    Field effect transistors
    Zirconia
    Ferroelectric materials
    Capacitance
    Semiconductor materials
    Drain current
    Metals
    Hysteresis
    Dynamic models
    Electric fields
    Temperature

    All Science Journal Classification (ASJC) codes

    • Electrical and Electronic Engineering

    Cite this

    Sharma, P., Tapily, K., Saha, A. K., Zhang, J., Shaughnessy, A., Aziz, A., ... Datta, S. (2017). Impact of total and partial dipole switching on the switching slope of gate-last negative capacitance FETs with ferroelectric hafnium zirconium oxide gate stack. In 2017 Symposium on VLSI Technology, VLSI Technology 2017 (pp. T154-T155). [7998160] (Digest of Technical Papers - Symposium on VLSI Technology). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/VLSIT.2017.7998160
    Sharma, P. ; Tapily, K. ; Saha, A. K. ; Zhang, J. ; Shaughnessy, A. ; Aziz, A. ; Snider, G. L. ; Gupta, Sumeet Kumar ; Clark, R. D. ; Datta, S. / Impact of total and partial dipole switching on the switching slope of gate-last negative capacitance FETs with ferroelectric hafnium zirconium oxide gate stack. 2017 Symposium on VLSI Technology, VLSI Technology 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. T154-T155 (Digest of Technical Papers - Symposium on VLSI Technology).
    @inproceedings{6d521472f6aa4b95bbed2b3584a34c82,
    title = "Impact of total and partial dipole switching on the switching slope of gate-last negative capacitance FETs with ferroelectric hafnium zirconium oxide gate stack",
    abstract = "We report, for the first time, a gate last process, used to fabricate Negative Capacitance field effect transistors (NCFETs) with Hf0.5Zr0.5O2 (HZO) as ferroelectric (FE) dielectric in a metal/ferroelectric/insulator/semiconductor (MFIS) configuration. Long channel NCFET's with HZO thickness down to 5 nm exhibit consistent switching behavior with switching slope (SSrev) below kT/q over four decades of drain current. Temperature dependent transport study shows that, the effective mobility of HZO NCFETs is 15 {\%} higher than that of HfO2 based control MOSFETs due to suppression of Hf diffusion into the interfacial SiO2 layer (IL). Using the Preisach hysteresis model, which models dynamics of FE switching through a cluster of independent switching dipoles at arbitrary electric field, we (a) explain the asymmetric SS behavior of NCFETs in MFIS configuration, and (b) establish design guidelines for achieving sub-kT/q SS in both forward and reverse sweep direction.",
    author = "P. Sharma and K. Tapily and Saha, {A. K.} and J. Zhang and A. Shaughnessy and A. Aziz and Snider, {G. L.} and Gupta, {Sumeet Kumar} and Clark, {R. D.} and S. Datta",
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    Sharma, P, Tapily, K, Saha, AK, Zhang, J, Shaughnessy, A, Aziz, A, Snider, GL, Gupta, SK, Clark, RD & Datta, S 2017, Impact of total and partial dipole switching on the switching slope of gate-last negative capacitance FETs with ferroelectric hafnium zirconium oxide gate stack. in 2017 Symposium on VLSI Technology, VLSI Technology 2017., 7998160, Digest of Technical Papers - Symposium on VLSI Technology, Institute of Electrical and Electronics Engineers Inc., pp. T154-T155, 37th Symposium on VLSI Technology, VLSI Technology 2017, Kyoto, Japan, 6/5/17. https://doi.org/10.23919/VLSIT.2017.7998160

    Impact of total and partial dipole switching on the switching slope of gate-last negative capacitance FETs with ferroelectric hafnium zirconium oxide gate stack. / Sharma, P.; Tapily, K.; Saha, A. K.; Zhang, J.; Shaughnessy, A.; Aziz, A.; Snider, G. L.; Gupta, Sumeet Kumar; Clark, R. D.; Datta, S.

    2017 Symposium on VLSI Technology, VLSI Technology 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. T154-T155 7998160 (Digest of Technical Papers - Symposium on VLSI Technology).

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

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    T1 - Impact of total and partial dipole switching on the switching slope of gate-last negative capacitance FETs with ferroelectric hafnium zirconium oxide gate stack

    AU - Sharma, P.

    AU - Tapily, K.

    AU - Saha, A. K.

    AU - Zhang, J.

    AU - Shaughnessy, A.

    AU - Aziz, A.

    AU - Snider, G. L.

    AU - Gupta, Sumeet Kumar

    AU - Clark, R. D.

    AU - Datta, S.

    PY - 2017/7/31

    Y1 - 2017/7/31

    N2 - We report, for the first time, a gate last process, used to fabricate Negative Capacitance field effect transistors (NCFETs) with Hf0.5Zr0.5O2 (HZO) as ferroelectric (FE) dielectric in a metal/ferroelectric/insulator/semiconductor (MFIS) configuration. Long channel NCFET's with HZO thickness down to 5 nm exhibit consistent switching behavior with switching slope (SSrev) below kT/q over four decades of drain current. Temperature dependent transport study shows that, the effective mobility of HZO NCFETs is 15 % higher than that of HfO2 based control MOSFETs due to suppression of Hf diffusion into the interfacial SiO2 layer (IL). Using the Preisach hysteresis model, which models dynamics of FE switching through a cluster of independent switching dipoles at arbitrary electric field, we (a) explain the asymmetric SS behavior of NCFETs in MFIS configuration, and (b) establish design guidelines for achieving sub-kT/q SS in both forward and reverse sweep direction.

    AB - We report, for the first time, a gate last process, used to fabricate Negative Capacitance field effect transistors (NCFETs) with Hf0.5Zr0.5O2 (HZO) as ferroelectric (FE) dielectric in a metal/ferroelectric/insulator/semiconductor (MFIS) configuration. Long channel NCFET's with HZO thickness down to 5 nm exhibit consistent switching behavior with switching slope (SSrev) below kT/q over four decades of drain current. Temperature dependent transport study shows that, the effective mobility of HZO NCFETs is 15 % higher than that of HfO2 based control MOSFETs due to suppression of Hf diffusion into the interfacial SiO2 layer (IL). Using the Preisach hysteresis model, which models dynamics of FE switching through a cluster of independent switching dipoles at arbitrary electric field, we (a) explain the asymmetric SS behavior of NCFETs in MFIS configuration, and (b) establish design guidelines for achieving sub-kT/q SS in both forward and reverse sweep direction.

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    M3 - Conference contribution

    AN - SCOPUS:85028059471

    T3 - Digest of Technical Papers - Symposium on VLSI Technology

    SP - T154-T155

    BT - 2017 Symposium on VLSI Technology, VLSI Technology 2017

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    Sharma P, Tapily K, Saha AK, Zhang J, Shaughnessy A, Aziz A et al. Impact of total and partial dipole switching on the switching slope of gate-last negative capacitance FETs with ferroelectric hafnium zirconium oxide gate stack. In 2017 Symposium on VLSI Technology, VLSI Technology 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. T154-T155. 7998160. (Digest of Technical Papers - Symposium on VLSI Technology). https://doi.org/10.23919/VLSIT.2017.7998160