Impact of total and partial dipole switching on the switching slope of gate-last negative capacitance FETs with ferroelectric hafnium zirconium oxide gate stack

P. Sharma, K. Tapily, A. K. Saha, J. Zhang, A. Shaughnessy, A. Aziz, G. L. Snider, S. Gupta, R. D. Clark, S. Datta

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

    79 Scopus citations

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    Engineering & Materials Science