Implementing Dopant-Free Hole-Transporting Layers and Metal-Incorporated CsPbI2Br for Stable All-Inorganic Perovskite Solar Cells

Sawanta S. Mali, Jyoti V. Patil, Julian A. Steele, Sachin R. Rondiya, Nelson Y. Dzade, Chang Kook Hong

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11 Scopus citations


Mixed-halide CsPbI2Br perovskite is promising for efficient and thermally stable all-inorganic solar cells; however, the use of conventional antisolvent methods and additives-based hole-transporting layers (HTLs) currently hampers progress. Here, we have employed hot-air-assisted perovskite deposition in ambient condition to obtain high-quality photoactive CsPbI2Br perovskite films and have extended stable device operation using metal cation doping and dopant-free hole-transporting materials. Density functional theory calculations are used to study the structural and optoelectronic properties of the CsPbI2Br perovskite when it is doped with metal cations Eu2+ and In3+. We experimentally incorporated Eu2+ and In3+ metal ions into CsPbI2Br films and applied dopant-free copper(I) thiocyanate (CuSCN) and poly(3-hexylthiophene) (P3HT)-based materials as low-cost hole transporting layers, leading to record-high power conversion efficiencies of 15.27% and 15.69%, respectively, and a retention of >95% of the initial efficiency over 1600 h at 85 °C thermal stress.

Original languageEnglish (US)
Pages (from-to)778-788
Number of pages11
JournalACS Energy Letters
Issue number2
StatePublished - Feb 12 2021

All Science Journal Classification (ASJC) codes

  • Chemistry (miscellaneous)
  • Renewable Energy, Sustainability and the Environment
  • Fuel Technology
  • Energy Engineering and Power Technology
  • Materials Chemistry

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