Imprinting of Local Metallic States into VO2 with Ultraviolet Light

Hai Tian Zhang, Lu Guo, Greg Stone, Lei Zhang, Yuan Xia Zheng, Eugene Freeman, Derek W. Keefer, Subhasis Chaudhuri, Hanjong Paik, Jarrett A. Moyer, Michael Barth, Darrell G. Schlom, John V. Badding, Suman Datta, Venkatraman Gopalan, Roman Engel-Herbert

Research output: Contribution to journalArticlepeer-review

24 Scopus citations

Abstract

Materials exhibiting electronic phase transitions have attracted widespread attention. By switching between metallic and insulating states under external stimuli, the accompanying changes in the electrical and optical properties can be harnessed in novel electronic and optical applications. In this work, a laterally confined conductive pattern is inscribed into an otherwise insulating VO2 thin film using ultraviolet light, inducing an almost four orders of magnitude decrease in electrical resistivity of the exposed area. The metallic imprint remains in VO2 after ultraviolet light exposure and can be completely erased by a short low temperature anneal. The ability to optically pattern confined metallic structures provides new opportunities for reconfigurable photonic and plasmonic structures, as well as re-writable electric circuitry.

Original languageEnglish (US)
Pages (from-to)6612-6618
Number of pages7
JournalAdvanced Functional Materials
Volume26
Issue number36
DOIs
StatePublished - Sep 26 2016

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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