Improved ohmic contact to n-type 4H and 6H-SiC using nichrome

E. D. Luckowski, J. M. Delucca, J. R. Williams, Suzanne E. Mohney, M. J. Bozack, T. Isaacs-Smith, J. Crofton

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Results are reported for ohmic contacts formed on n-type 4H and 6H-SiC using nichrome (80/20 weight percent Ni/Cr). The electrical characteristics of these NiCr contacts are similar to those of contacts formed on 6H-SiC using pure Ni (∼1×10-5Ω-cm2 for moderately doped material), but the contacts exhibit significant improvement with regard to physical stability. Composite Au/NiCr contacts exhibit good stability during long-term anneals (∼2500 h) at 300°C without the requirement of a diffusion barrier layer between the NiCr ohmic contact layer and the Au cap layer. In addition, the use of NiCr results in success rates near 100% for direct wire bonding to the Au cap layers. Characterization of the contacts by Auger electron spectroscopy, Rutherford backscattering spectroscopy, and transmission electron microscopy provides an explanation for the observed behavior.

Original languageEnglish (US)
Pages (from-to)330-334
Number of pages5
JournalJournal of Electronic Materials
Volume27
Issue number4
DOIs
StatePublished - Jan 1 1998

Fingerprint

Nichrome (trademark)
Ohmic contacts
electric contacts
caps
Diffusion barriers
Rutherford backscattering spectroscopy
Auger electron spectroscopy
Wire
barrier layers
Transmission electron microscopy
Auger spectroscopy
electron spectroscopy
backscattering
Composite materials
wire
requirements
transmission electron microscopy
composite materials
spectroscopy
nichrome

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Luckowski, E. D., Delucca, J. M., Williams, J. R., Mohney, S. E., Bozack, M. J., Isaacs-Smith, T., & Crofton, J. (1998). Improved ohmic contact to n-type 4H and 6H-SiC using nichrome. Journal of Electronic Materials, 27(4), 330-334. https://doi.org/10.1007/s11664-998-0410-y
Luckowski, E. D. ; Delucca, J. M. ; Williams, J. R. ; Mohney, Suzanne E. ; Bozack, M. J. ; Isaacs-Smith, T. ; Crofton, J. / Improved ohmic contact to n-type 4H and 6H-SiC using nichrome. In: Journal of Electronic Materials. 1998 ; Vol. 27, No. 4. pp. 330-334.
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abstract = "Results are reported for ohmic contacts formed on n-type 4H and 6H-SiC using nichrome (80/20 weight percent Ni/Cr). The electrical characteristics of these NiCr contacts are similar to those of contacts formed on 6H-SiC using pure Ni (∼1×10-5Ω-cm2 for moderately doped material), but the contacts exhibit significant improvement with regard to physical stability. Composite Au/NiCr contacts exhibit good stability during long-term anneals (∼2500 h) at 300°C without the requirement of a diffusion barrier layer between the NiCr ohmic contact layer and the Au cap layer. In addition, the use of NiCr results in success rates near 100{\%} for direct wire bonding to the Au cap layers. Characterization of the contacts by Auger electron spectroscopy, Rutherford backscattering spectroscopy, and transmission electron microscopy provides an explanation for the observed behavior.",
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Luckowski, ED, Delucca, JM, Williams, JR, Mohney, SE, Bozack, MJ, Isaacs-Smith, T & Crofton, J 1998, 'Improved ohmic contact to n-type 4H and 6H-SiC using nichrome', Journal of Electronic Materials, vol. 27, no. 4, pp. 330-334. https://doi.org/10.1007/s11664-998-0410-y

Improved ohmic contact to n-type 4H and 6H-SiC using nichrome. / Luckowski, E. D.; Delucca, J. M.; Williams, J. R.; Mohney, Suzanne E.; Bozack, M. J.; Isaacs-Smith, T.; Crofton, J.

In: Journal of Electronic Materials, Vol. 27, No. 4, 01.01.1998, p. 330-334.

Research output: Contribution to journalArticle

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AU - Luckowski, E. D.

AU - Delucca, J. M.

AU - Williams, J. R.

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AU - Bozack, M. J.

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N2 - Results are reported for ohmic contacts formed on n-type 4H and 6H-SiC using nichrome (80/20 weight percent Ni/Cr). The electrical characteristics of these NiCr contacts are similar to those of contacts formed on 6H-SiC using pure Ni (∼1×10-5Ω-cm2 for moderately doped material), but the contacts exhibit significant improvement with regard to physical stability. Composite Au/NiCr contacts exhibit good stability during long-term anneals (∼2500 h) at 300°C without the requirement of a diffusion barrier layer between the NiCr ohmic contact layer and the Au cap layer. In addition, the use of NiCr results in success rates near 100% for direct wire bonding to the Au cap layers. Characterization of the contacts by Auger electron spectroscopy, Rutherford backscattering spectroscopy, and transmission electron microscopy provides an explanation for the observed behavior.

AB - Results are reported for ohmic contacts formed on n-type 4H and 6H-SiC using nichrome (80/20 weight percent Ni/Cr). The electrical characteristics of these NiCr contacts are similar to those of contacts formed on 6H-SiC using pure Ni (∼1×10-5Ω-cm2 for moderately doped material), but the contacts exhibit significant improvement with regard to physical stability. Composite Au/NiCr contacts exhibit good stability during long-term anneals (∼2500 h) at 300°C without the requirement of a diffusion barrier layer between the NiCr ohmic contact layer and the Au cap layer. In addition, the use of NiCr results in success rates near 100% for direct wire bonding to the Au cap layers. Characterization of the contacts by Auger electron spectroscopy, Rutherford backscattering spectroscopy, and transmission electron microscopy provides an explanation for the observed behavior.

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Luckowski ED, Delucca JM, Williams JR, Mohney SE, Bozack MJ, Isaacs-Smith T et al. Improved ohmic contact to n-type 4H and 6H-SiC using nichrome. Journal of Electronic Materials. 1998 Jan 1;27(4):330-334. https://doi.org/10.1007/s11664-998-0410-y