Improved ohmic contact to n-type 4H and 6H-SiC using nichrome

E. D. Luckowski, J. M. Delucca, J. R. Williams, Suzanne E. Mohney, M. J. Bozack, T. Isaacs-Smith, J. Crofton

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Abstract

Results are reported for ohmic contacts formed on n-type 4H and 6H-SiC using nichrome (80/20 weight percent Ni/Cr). The electrical characteristics of these NiCr contacts are similar to those of contacts formed on 6H-SiC using pure Ni (∼1×10-5Ω-cm2 for moderately doped material), but the contacts exhibit significant improvement with regard to physical stability. Composite Au/NiCr contacts exhibit good stability during long-term anneals (∼2500 h) at 300°C without the requirement of a diffusion barrier layer between the NiCr ohmic contact layer and the Au cap layer. In addition, the use of NiCr results in success rates near 100% for direct wire bonding to the Au cap layers. Characterization of the contacts by Auger electron spectroscopy, Rutherford backscattering spectroscopy, and transmission electron microscopy provides an explanation for the observed behavior.

Original languageEnglish (US)
Pages (from-to)330-334
Number of pages5
JournalJournal of Electronic Materials
Volume27
Issue number4
DOIs
StatePublished - Jan 1 1998

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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