Improved organic thin film transistor performance using chemically-modified gate dielectrics

David J. Gundlach, C. C.Shelby Kuo, Chris D. Sheraw, Jonathan A. Nichols, Thomas Nelson Jackson

Research output: Contribution to journalConference article

35 Citations (Scopus)

Abstract

We report on the use of silicon dioxide gate dielectric chemically-modified with vapor-deposited octadecyltrichlorosilane (OTS) monolayers for improved organic thin film transistor (OTFT) performance. To date, silicon dioxide gate dielectric chemically-modified with OTS monolayers deposited from solvent solution have demonstrated the highest reported OTFT performance using the small-molecule organic semiconductor pentacene as the active layer. Vapor treatment is an attractive alternative, especially for polymeric substrates that may be degraded by solvent exposure. Using our OTS vapor treatment we have fabricated photolithographically defined pentacene OTFTs on flexible polymeric substrates with field-effect mobility greater than 1.5 cm2/V-s. We find the performance of pentacene as well as several other small-molecule organic active layer materials can be significantly improved using silicon dioxide gate dielectric chemically-modified with vacuum vapor prime OTS. Pentacene, naphthacene, Cu-phthalocyanine, and alpha-sexithienyl OTFTs fabricated on thermally oxidized silicon substrates with photolithographically defined "bottom" contacts typically show a factor of 2 to 5 improvement in field-effect mobility and reduced subthreshold slope when using silicon dioxide gate dielectric vacuum vapor treated with OTS compared to OTFTs on untreated gate dielectric.

Original languageEnglish (US)
Pages (from-to)54-64
Number of pages11
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4466
DOIs
StatePublished - Dec 1 2001

Fingerprint

Thin-film Transistor
Gate dielectrics
Thin film transistors
Silicon
transistors
Silicon Dioxide
Vapors
vapors
Silica
silicon dioxide
thin films
Monolayers
Vacuum
Substrates
Substrate
Molecules
Organic Semiconductors
Phthalocyanine
Flexible Substrate
vacuum

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

@article{2106a9b88aa7497a8e998312f4f4d98c,
title = "Improved organic thin film transistor performance using chemically-modified gate dielectrics",
abstract = "We report on the use of silicon dioxide gate dielectric chemically-modified with vapor-deposited octadecyltrichlorosilane (OTS) monolayers for improved organic thin film transistor (OTFT) performance. To date, silicon dioxide gate dielectric chemically-modified with OTS monolayers deposited from solvent solution have demonstrated the highest reported OTFT performance using the small-molecule organic semiconductor pentacene as the active layer. Vapor treatment is an attractive alternative, especially for polymeric substrates that may be degraded by solvent exposure. Using our OTS vapor treatment we have fabricated photolithographically defined pentacene OTFTs on flexible polymeric substrates with field-effect mobility greater than 1.5 cm2/V-s. We find the performance of pentacene as well as several other small-molecule organic active layer materials can be significantly improved using silicon dioxide gate dielectric chemically-modified with vacuum vapor prime OTS. Pentacene, naphthacene, Cu-phthalocyanine, and alpha-sexithienyl OTFTs fabricated on thermally oxidized silicon substrates with photolithographically defined {"}bottom{"} contacts typically show a factor of 2 to 5 improvement in field-effect mobility and reduced subthreshold slope when using silicon dioxide gate dielectric vacuum vapor treated with OTS compared to OTFTs on untreated gate dielectric.",
author = "Gundlach, {David J.} and Kuo, {C. C.Shelby} and Sheraw, {Chris D.} and Nichols, {Jonathan A.} and Jackson, {Thomas Nelson}",
year = "2001",
month = "12",
day = "1",
doi = "10.1117/12.451466",
language = "English (US)",
volume = "4466",
pages = "54--64",
journal = "Proceedings of SPIE - The International Society for Optical Engineering",
issn = "0277-786X",
publisher = "SPIE",

}

Improved organic thin film transistor performance using chemically-modified gate dielectrics. / Gundlach, David J.; Kuo, C. C.Shelby; Sheraw, Chris D.; Nichols, Jonathan A.; Jackson, Thomas Nelson.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 4466, 01.12.2001, p. 54-64.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Improved organic thin film transistor performance using chemically-modified gate dielectrics

AU - Gundlach, David J.

AU - Kuo, C. C.Shelby

AU - Sheraw, Chris D.

AU - Nichols, Jonathan A.

AU - Jackson, Thomas Nelson

PY - 2001/12/1

Y1 - 2001/12/1

N2 - We report on the use of silicon dioxide gate dielectric chemically-modified with vapor-deposited octadecyltrichlorosilane (OTS) monolayers for improved organic thin film transistor (OTFT) performance. To date, silicon dioxide gate dielectric chemically-modified with OTS monolayers deposited from solvent solution have demonstrated the highest reported OTFT performance using the small-molecule organic semiconductor pentacene as the active layer. Vapor treatment is an attractive alternative, especially for polymeric substrates that may be degraded by solvent exposure. Using our OTS vapor treatment we have fabricated photolithographically defined pentacene OTFTs on flexible polymeric substrates with field-effect mobility greater than 1.5 cm2/V-s. We find the performance of pentacene as well as several other small-molecule organic active layer materials can be significantly improved using silicon dioxide gate dielectric chemically-modified with vacuum vapor prime OTS. Pentacene, naphthacene, Cu-phthalocyanine, and alpha-sexithienyl OTFTs fabricated on thermally oxidized silicon substrates with photolithographically defined "bottom" contacts typically show a factor of 2 to 5 improvement in field-effect mobility and reduced subthreshold slope when using silicon dioxide gate dielectric vacuum vapor treated with OTS compared to OTFTs on untreated gate dielectric.

AB - We report on the use of silicon dioxide gate dielectric chemically-modified with vapor-deposited octadecyltrichlorosilane (OTS) monolayers for improved organic thin film transistor (OTFT) performance. To date, silicon dioxide gate dielectric chemically-modified with OTS monolayers deposited from solvent solution have demonstrated the highest reported OTFT performance using the small-molecule organic semiconductor pentacene as the active layer. Vapor treatment is an attractive alternative, especially for polymeric substrates that may be degraded by solvent exposure. Using our OTS vapor treatment we have fabricated photolithographically defined pentacene OTFTs on flexible polymeric substrates with field-effect mobility greater than 1.5 cm2/V-s. We find the performance of pentacene as well as several other small-molecule organic active layer materials can be significantly improved using silicon dioxide gate dielectric chemically-modified with vacuum vapor prime OTS. Pentacene, naphthacene, Cu-phthalocyanine, and alpha-sexithienyl OTFTs fabricated on thermally oxidized silicon substrates with photolithographically defined "bottom" contacts typically show a factor of 2 to 5 improvement in field-effect mobility and reduced subthreshold slope when using silicon dioxide gate dielectric vacuum vapor treated with OTS compared to OTFTs on untreated gate dielectric.

UR - http://www.scopus.com/inward/record.url?scp=0035765761&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035765761&partnerID=8YFLogxK

U2 - 10.1117/12.451466

DO - 10.1117/12.451466

M3 - Conference article

VL - 4466

SP - 54

EP - 64

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

SN - 0277-786X

ER -