Improved performance of plasma-assisted molecular beam epitaxy grown AlGaN/GaN high electron mobility transistors with gate-recess and CF 4-treatment

Rongming Chu, Christiane Poblenz, Man Hoi Wong, Sansaptak Dasgupta, Siddharth Rajan, Yi Pei, Felix Recht, Likun Shen, James S. Speck, Umesh K. Mishra

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3 Scopus citations

Abstract

High performance AlGaN/GaN high electron mobility transistors grown by plasma-assisted molecular beam epitaxy were fabricated. An integrated slant field-plate was used to suppress the DC-RF dispersion and enhance the breakdown. A recessed-gate structure was adopted to increase the cutoff frequency from 17.5 to 22 GHz. And a CF4-plasma treatment prior to gate metallization was found effective in reducing the gate leakage by one order of magnitude and improving the stability of the RF power operation. Treatment In a mixture of HF and HNO3 acid was essential to ensure the effectiveness of the CF4-plasma treatment. Combination of these technologies yielded state-of-the-art MBE grown AlGaN/GaN HEMTs with stable high-power and high-efficiency operation. At 4-GHz frequency and 48-V bias, a CW power of 12 W/mm with 64% associated efficiency was achieved.

Original languageEnglish (US)
Pages (from-to)611011-611013
Number of pages3
JournalApplied Physics Express
Volume1
Issue number6
DOIs
StatePublished - Jun 1 2008

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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    Chu, R., Poblenz, C., Wong, M. H., Dasgupta, S., Rajan, S., Pei, Y., Recht, F., Shen, L., Speck, J. S., & Mishra, U. K. (2008). Improved performance of plasma-assisted molecular beam epitaxy grown AlGaN/GaN high electron mobility transistors with gate-recess and CF 4-treatment. Applied Physics Express, 1(6), 611011-611013. https://doi.org/10.1143/APEX.1.061101