Improved performance of plasma-assisted molecular beam epitaxy grown AlGaN/GaN high electron mobility transistors with gate-recess and CF 4-treatment

Rongming Chu, Christiane Poblenz, Man Hoi Wong, Sansaptak Dasgupta, Siddharth Rajan, Yi Pei, Felix Recht, Likun Shen, James S. Speck, Umesh K. Mishra

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