Improved thermoelectric devices using bismuth alloys

T. Thonhauser, T. J. Scheidemantel, J. O. Sofo

Research output: Contribution to journalArticlepeer-review

31 Scopus citations

Abstract

First principles transport calculations for bismuth, utilizing the linearized-augmented plane-wave method were used to explore the potential for Bi as a thermoelectric for doping. Large peaks in the power factor of bismuth alloys were found using this method. Transport distribution for bismuth were also calculated and it was found that rhombohedral unit cell of bismuth exhibits only a small distortion from the cubic symmetry. This study provided important guidelines for the search of improved thermoelectric materials.

Original languageEnglish (US)
Pages (from-to)588-590
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number4
DOIs
StatePublished - Jul 26 2004

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Improved thermoelectric devices using bismuth alloys'. Together they form a unique fingerprint.

Cite this