Improved thermoelectric devices using bismuth alloys

T. Thonhauser; T. J. Scheidemantel; J. O. Sofo

doi:10.1063/1.1775286

Improved thermoelectric devices using bismuth alloys

T. Thonhauser, T. J. Scheidemantel, J. O. Sofo

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

First principles transport calculations for bismuth, utilizing the linearized-augmented plane-wave method were used to explore the potential for Bi as a thermoelectric for doping. Large peaks in the power factor of bismuth alloys were found using this method. Transport distribution for bismuth were also calculated and it was found that rhombohedral unit cell of bismuth exhibits only a small distortion from the cubic symmetry. This study provided important guidelines for the search of improved thermoelectric materials.

Original language	English (US)
Pages (from-to)	588-590
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	4
DOIs	https://doi.org/10.1063/1.1775286
State	Published - Jul 26 2004

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1775286

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