Improved thermoelectric devices using bismuth alloys

T. Thonhauser, T. J. Scheidemantel, Jorge Osvaldo Sofo

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

First principles transport calculations for bismuth, utilizing the linearized-augmented plane-wave method were used to explore the potential for Bi as a thermoelectric for doping. Large peaks in the power factor of bismuth alloys were found using this method. Transport distribution for bismuth were also calculated and it was found that rhombohedral unit cell of bismuth exhibits only a small distortion from the cubic symmetry. This study provided important guidelines for the search of improved thermoelectric materials.

Original languageEnglish (US)
Pages (from-to)588-590
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number4
DOIs
StatePublished - Jul 26 2004

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bismuth alloys
bismuth
thermoelectric materials
plane waves
symmetry
cells

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Thonhauser, T. ; Scheidemantel, T. J. ; Sofo, Jorge Osvaldo. / Improved thermoelectric devices using bismuth alloys. In: Applied Physics Letters. 2004 ; Vol. 85, No. 4. pp. 588-590.
@article{5c31945350e0438e816ed0f1d48493fc,
title = "Improved thermoelectric devices using bismuth alloys",
abstract = "First principles transport calculations for bismuth, utilizing the linearized-augmented plane-wave method were used to explore the potential for Bi as a thermoelectric for doping. Large peaks in the power factor of bismuth alloys were found using this method. Transport distribution for bismuth were also calculated and it was found that rhombohedral unit cell of bismuth exhibits only a small distortion from the cubic symmetry. This study provided important guidelines for the search of improved thermoelectric materials.",
author = "T. Thonhauser and Scheidemantel, {T. J.} and Sofo, {Jorge Osvaldo}",
year = "2004",
month = "7",
day = "26",
doi = "10.1063/1.1775286",
language = "English (US)",
volume = "85",
pages = "588--590",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "4",

}

Improved thermoelectric devices using bismuth alloys. / Thonhauser, T.; Scheidemantel, T. J.; Sofo, Jorge Osvaldo.

In: Applied Physics Letters, Vol. 85, No. 4, 26.07.2004, p. 588-590.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Improved thermoelectric devices using bismuth alloys

AU - Thonhauser, T.

AU - Scheidemantel, T. J.

AU - Sofo, Jorge Osvaldo

PY - 2004/7/26

Y1 - 2004/7/26

N2 - First principles transport calculations for bismuth, utilizing the linearized-augmented plane-wave method were used to explore the potential for Bi as a thermoelectric for doping. Large peaks in the power factor of bismuth alloys were found using this method. Transport distribution for bismuth were also calculated and it was found that rhombohedral unit cell of bismuth exhibits only a small distortion from the cubic symmetry. This study provided important guidelines for the search of improved thermoelectric materials.

AB - First principles transport calculations for bismuth, utilizing the linearized-augmented plane-wave method were used to explore the potential for Bi as a thermoelectric for doping. Large peaks in the power factor of bismuth alloys were found using this method. Transport distribution for bismuth were also calculated and it was found that rhombohedral unit cell of bismuth exhibits only a small distortion from the cubic symmetry. This study provided important guidelines for the search of improved thermoelectric materials.

UR - http://www.scopus.com/inward/record.url?scp=4043096828&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4043096828&partnerID=8YFLogxK

U2 - 10.1063/1.1775286

DO - 10.1063/1.1775286

M3 - Article

AN - SCOPUS:4043096828

VL - 85

SP - 588

EP - 590

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 4

ER -