Improved thermoelectric properties due to electronic topological transition under high pressure

N. V. Chandra Shekar, D. A. Polvani, J. F. Meng, John V. Badding

Research output: Contribution to journalArticlepeer-review

39 Scopus citations

Abstract

It is well documented that the large increase in thermopower in some materials under the action of pressure, could be explained by electronic topological transition (ETT). In this paper, the subject is revisited, with fresh experimental reports establishing pronounced enhancement of the TEP due to ETT. Further, the validity and relevance of certain important criteria for obtaining higher thermoelectric power near ETT is discussed. The possibility of using ETT in designing new materials with the thermoelectric figure of merit higher than 1 is examined.

Original languageEnglish (US)
Pages (from-to)14-18
Number of pages5
JournalPhysica B: Condensed Matter
Volume358
Issue number1-4
DOIs
StatePublished - Apr 15 2005

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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