Improvement in the thermoelectric properties of pressure-tuned β-K2Bi8Se13

J. F. Meng, N. V.Chandra Shekar, D. Y. Chung, M. Kanatzidis, John V. Badding

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

A report on the thermoelectric properties of the semiconductor β-K2Bi8Se13, analyzed under pressure, was presented. X-ray diffraction technique was used to study the structural change upon compression. The peak in the thermoelectric power was found suggestive of an electronic topological transition upon compression.

Original languageEnglish (US)
Pages (from-to)4485-4488
Number of pages4
JournalJournal of Applied Physics
Volume94
Issue number7
DOIs
StatePublished - Oct 1 2003

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electronics
diffraction
x rays

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Meng, J. F., Shekar, N. V. C., Chung, D. Y., Kanatzidis, M., & Badding, J. V. (2003). Improvement in the thermoelectric properties of pressure-tuned β-K2Bi8Se13 Journal of Applied Physics, 94(7), 4485-4488. https://doi.org/10.1063/1.1599049
Meng, J. F. ; Shekar, N. V.Chandra ; Chung, D. Y. ; Kanatzidis, M. ; Badding, John V. / Improvement in the thermoelectric properties of pressure-tuned β-K2Bi8Se13 In: Journal of Applied Physics. 2003 ; Vol. 94, No. 7. pp. 4485-4488.
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Meng, JF, Shekar, NVC, Chung, DY, Kanatzidis, M & Badding, JV 2003, 'Improvement in the thermoelectric properties of pressure-tuned β-K2Bi8Se13 ', Journal of Applied Physics, vol. 94, no. 7, pp. 4485-4488. https://doi.org/10.1063/1.1599049

Improvement in the thermoelectric properties of pressure-tuned β-K2Bi8Se13 . / Meng, J. F.; Shekar, N. V.Chandra; Chung, D. Y.; Kanatzidis, M.; Badding, John V.

In: Journal of Applied Physics, Vol. 94, No. 7, 01.10.2003, p. 4485-4488.

Research output: Contribution to journalArticle

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AU - Badding, John V.

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