Improvement in the thermoelectric properties of pressure-tuned β-K2Bi8Se13

J. F. Meng, N. V.Chandra Shekar, D. Y. Chung, M. Kanatzidis, J. V. Badding

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Abstract

A report on the thermoelectric properties of the semiconductor β-K2Bi8Se13, analyzed under pressure, was presented. X-ray diffraction technique was used to study the structural change upon compression. The peak in the thermoelectric power was found suggestive of an electronic topological transition upon compression.

Original languageEnglish (US)
Pages (from-to)4485-4488
Number of pages4
JournalJournal of Applied Physics
Volume94
Issue number7
DOIs
StatePublished - Oct 1 2003

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Meng, J. F., Shekar, N. V. C., Chung, D. Y., Kanatzidis, M., & Badding, J. V. (2003). Improvement in the thermoelectric properties of pressure-tuned β-K2Bi8Se13. Journal of Applied Physics, 94(7), 4485-4488. https://doi.org/10.1063/1.1599049