Improvement of field emission performance on nitrogen ion implanted ultrananocrystalline diamond films through visualization of structure modifications

Ying Chieh Chen, Xiao Yan Zhong, Bernd Kabius, Jon M. Hiller, Nyan Hwa Tai, I. Nan Lin

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

The relationship between the electron field emission properties and structure of ultra-nanocrystalline diamond (UNCD) films implanted by nitrogen ions or carbon ions was investigated. The electron field emission properties of nitrogen-implanted UNCD films and carbon-implanted UNCD films were pronouncedly improved with respect to those of as-grown UNCD films, that is, the turn-on field decreased from 23.2 V/μm to 12.5 V/μm and the electron field emission current density increased from 10E-5 mA/cm2 to 1 × 10E-2 mA/cm2. The formation of a graphitic phase in the nitrogen-implanted UNCD films was demonstrated by Raman microscopy and cross-sectional high-resolution transmission electron microscopy. The possible mechanism is presumed to be that the nitrogen ion irradiation induces the structure modification (converting sp3-bonded carbons into sp 2-bonded ones) in UNCD films.

Original languageEnglish (US)
Pages (from-to)238-241
Number of pages4
JournalDiamond and Related Materials
Volume20
Issue number2
DOIs
StatePublished - Feb 2011

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

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