Improvement of the dynamic on-resistance characteristics of GaN-on-Si power transistors with a sloped field-plate

Zijian Li, Rongming Chu, Daniel Zehnder, Sameh Khalil, Mary Chen, Xu Chen, Karim Boutros

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

High Electron Mobility Transistors (HEMTs) based on GaN are attractive for high-speed and high-voltage applications. The performance advantages of the GaN HEMTs rely on the high breakdown field of the GaN material and the high electron mobility of the 2-dimesional electron gas (2DEG) in the AlGaN/GaN heterojunction [1, 2]. In order to take full advantage of the excellent material properties, the shape of the electric-field distribution in the GaN HEMTs must be carefully optimized to operate the device at its highest switching speed while handling a large voltage swing. Without proper field-shaping, a high electric-field can cause electron injection into traps, hence degrading the output current and on-resistance during switching operation. This phenomenon is often referred to as dynamic on-resistance (Ron dynamic) degradation, current collapse or DC-RF dispersion. As an effective approach of shaping the electric-field, the use of field-plates in GaN HEMTs has received extensive studies [3]. For microwave applications, a V-shaped gate with integrated sloped field-plate was used to control the electric-field with minimal added capacitance associated with the field-plate [5, 6]. For high-voltage applications, a multiple field-plates structure was used to scale up the operating voltage [2, 4]. In this paper, we report a sloped field-plate approach for high-voltage applications.

Original languageEnglish (US)
Title of host publication72nd Device Research Conference, DRC 2014 - Conference Digest
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages257-258
Number of pages2
ISBN (Print)9781479954056
DOIs
StatePublished - Jan 1 2014
Event72nd Device Research Conference, DRC 2014 - Santa Barbara, CA, United States
Duration: Jun 22 2014Jun 25 2014

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

Other72nd Device Research Conference, DRC 2014
CountryUnited States
CitySanta Barbara, CA
Period6/22/146/25/14

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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