Improvement of the dynamic on-resistance characteristics of GaN-on-Si power transistors with a sloped field-plate

Zijian Li, Rongming Chu, Daniel Zehnder, Sameh Khalil, Mary Chen, Xu Chen, Karim Boutros

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

High Electron Mobility Transistors (HEMTs) based on GaN are attractive for high-speed and high-voltage applications. The performance advantages of the GaN HEMTs rely on the high breakdown field of the GaN material and the high electron mobility of the 2-dimesional electron gas (2DEG) in the AlGaN/GaN heterojunction [1, 2]. In order to take full advantage of the excellent material properties, the shape of the electric-field distribution in the GaN HEMTs must be carefully optimized to operate the device at its highest switching speed while handling a large voltage swing. Without proper field-shaping, a high electric-field can cause electron injection into traps, hence degrading the output current and on-resistance during switching operation. This phenomenon is often referred to as dynamic on-resistance (Ron dynamic) degradation, current collapse or DC-RF dispersion. As an effective approach of shaping the electric-field, the use of field-plates in GaN HEMTs has received extensive studies [3]. For microwave applications, a V-shaped gate with integrated sloped field-plate was used to control the electric-field with minimal added capacitance associated with the field-plate [5, 6]. For high-voltage applications, a multiple field-plates structure was used to scale up the operating voltage [2, 4]. In this paper, we report a sloped field-plate approach for high-voltage applications.

Original languageEnglish (US)
Title of host publication72nd Device Research Conference, DRC 2014 - Conference Digest
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages257-258
Number of pages2
ISBN (Print)9781479954056
DOIs
StatePublished - Jan 1 2014
Event72nd Device Research Conference, DRC 2014 - Santa Barbara, CA, United States
Duration: Jun 22 2014Jun 25 2014

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

Other72nd Device Research Conference, DRC 2014
CountryUnited States
CitySanta Barbara, CA
Period6/22/146/25/14

Fingerprint

High electron mobility transistors
Electric fields
Electric potential
Electron gas
Electron injection
Electron mobility
Heterojunctions
Materials properties
Capacitance
Microwaves
Power transistors
Degradation

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Li, Z., Chu, R., Zehnder, D., Khalil, S., Chen, M., Chen, X., & Boutros, K. (2014). Improvement of the dynamic on-resistance characteristics of GaN-on-Si power transistors with a sloped field-plate. In 72nd Device Research Conference, DRC 2014 - Conference Digest (pp. 257-258). [6872395] (Device Research Conference - Conference Digest, DRC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2014.6872395
Li, Zijian ; Chu, Rongming ; Zehnder, Daniel ; Khalil, Sameh ; Chen, Mary ; Chen, Xu ; Boutros, Karim. / Improvement of the dynamic on-resistance characteristics of GaN-on-Si power transistors with a sloped field-plate. 72nd Device Research Conference, DRC 2014 - Conference Digest. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 257-258 (Device Research Conference - Conference Digest, DRC).
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abstract = "High Electron Mobility Transistors (HEMTs) based on GaN are attractive for high-speed and high-voltage applications. The performance advantages of the GaN HEMTs rely on the high breakdown field of the GaN material and the high electron mobility of the 2-dimesional electron gas (2DEG) in the AlGaN/GaN heterojunction [1, 2]. In order to take full advantage of the excellent material properties, the shape of the electric-field distribution in the GaN HEMTs must be carefully optimized to operate the device at its highest switching speed while handling a large voltage swing. Without proper field-shaping, a high electric-field can cause electron injection into traps, hence degrading the output current and on-resistance during switching operation. This phenomenon is often referred to as dynamic on-resistance (Ron dynamic) degradation, current collapse or DC-RF dispersion. As an effective approach of shaping the electric-field, the use of field-plates in GaN HEMTs has received extensive studies [3]. For microwave applications, a V-shaped gate with integrated sloped field-plate was used to control the electric-field with minimal added capacitance associated with the field-plate [5, 6]. For high-voltage applications, a multiple field-plates structure was used to scale up the operating voltage [2, 4]. In this paper, we report a sloped field-plate approach for high-voltage applications.",
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Li, Z, Chu, R, Zehnder, D, Khalil, S, Chen, M, Chen, X & Boutros, K 2014, Improvement of the dynamic on-resistance characteristics of GaN-on-Si power transistors with a sloped field-plate. in 72nd Device Research Conference, DRC 2014 - Conference Digest., 6872395, Device Research Conference - Conference Digest, DRC, Institute of Electrical and Electronics Engineers Inc., pp. 257-258, 72nd Device Research Conference, DRC 2014, Santa Barbara, CA, United States, 6/22/14. https://doi.org/10.1109/DRC.2014.6872395

Improvement of the dynamic on-resistance characteristics of GaN-on-Si power transistors with a sloped field-plate. / Li, Zijian; Chu, Rongming; Zehnder, Daniel; Khalil, Sameh; Chen, Mary; Chen, Xu; Boutros, Karim.

72nd Device Research Conference, DRC 2014 - Conference Digest. Institute of Electrical and Electronics Engineers Inc., 2014. p. 257-258 6872395 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AU - Li, Zijian

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AU - Chen, Xu

AU - Boutros, Karim

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N2 - High Electron Mobility Transistors (HEMTs) based on GaN are attractive for high-speed and high-voltage applications. The performance advantages of the GaN HEMTs rely on the high breakdown field of the GaN material and the high electron mobility of the 2-dimesional electron gas (2DEG) in the AlGaN/GaN heterojunction [1, 2]. In order to take full advantage of the excellent material properties, the shape of the electric-field distribution in the GaN HEMTs must be carefully optimized to operate the device at its highest switching speed while handling a large voltage swing. Without proper field-shaping, a high electric-field can cause electron injection into traps, hence degrading the output current and on-resistance during switching operation. This phenomenon is often referred to as dynamic on-resistance (Ron dynamic) degradation, current collapse or DC-RF dispersion. As an effective approach of shaping the electric-field, the use of field-plates in GaN HEMTs has received extensive studies [3]. For microwave applications, a V-shaped gate with integrated sloped field-plate was used to control the electric-field with minimal added capacitance associated with the field-plate [5, 6]. For high-voltage applications, a multiple field-plates structure was used to scale up the operating voltage [2, 4]. In this paper, we report a sloped field-plate approach for high-voltage applications.

AB - High Electron Mobility Transistors (HEMTs) based on GaN are attractive for high-speed and high-voltage applications. The performance advantages of the GaN HEMTs rely on the high breakdown field of the GaN material and the high electron mobility of the 2-dimesional electron gas (2DEG) in the AlGaN/GaN heterojunction [1, 2]. In order to take full advantage of the excellent material properties, the shape of the electric-field distribution in the GaN HEMTs must be carefully optimized to operate the device at its highest switching speed while handling a large voltage swing. Without proper field-shaping, a high electric-field can cause electron injection into traps, hence degrading the output current and on-resistance during switching operation. This phenomenon is often referred to as dynamic on-resistance (Ron dynamic) degradation, current collapse or DC-RF dispersion. As an effective approach of shaping the electric-field, the use of field-plates in GaN HEMTs has received extensive studies [3]. For microwave applications, a V-shaped gate with integrated sloped field-plate was used to control the electric-field with minimal added capacitance associated with the field-plate [5, 6]. For high-voltage applications, a multiple field-plates structure was used to scale up the operating voltage [2, 4]. In this paper, we report a sloped field-plate approach for high-voltage applications.

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Li Z, Chu R, Zehnder D, Khalil S, Chen M, Chen X et al. Improvement of the dynamic on-resistance characteristics of GaN-on-Si power transistors with a sloped field-plate. In 72nd Device Research Conference, DRC 2014 - Conference Digest. Institute of Electrical and Electronics Engineers Inc. 2014. p. 257-258. 6872395. (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2014.6872395