Pt/Ba0.8Sr0.2TiO3 (BST)/Pt capacitors fabricated by the sol-gel process generally show abnormally high leakage currents. In this paper, we report the reduction of this leakage current in multilayered sol-gel Pt/BST/Pt thin film capacitors. The multilayered structure also provided the flexibility of adjusting the dielectric constant of the film. The thin films were fabricated by a step-by-step annealing scheme at 750 °C except that the top and bottom layers were annealed at less than 750 °C. The observed results are explained by an amorphous/polycrystalline structure, which was confirmed by scanning electron microscopy and X-ray diffraction analysis.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry