Improving the structural quality and electrical resistance of SrTiO3 thin films on Si (001) via a two-step anneal

Lei Zhang, Yaqiang Wang, Roman Engel-Herbert

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We report on the optimization of structural and electrical properties of SrTiO3 thin films grown on Si (001) by hybrid molecular beam epitaxy. Using a dual buffer layer template, 46-nm-thick films grown at high temperatures (850 °C) resulted in a layer-by-layer growth mode and a good crystalline quality with rocking curve full width at half maximum (FWHM) of the 002 SrTiO3 peak of nearly 0.6°, which was reduced to 0.4°by increasing the film thickness to 120 nm. A high temperature post-deposition anneal was employed to further reduce the rocking curve FWHM down to 0.2°while preserving a smooth film surface morphology. The low sheet resistance of as-grown and post-growth annealed samples was increased by five orders of magnitude exceeding 107 Ω/ using a lower temperature anneal in dry air. This two-step annealing method provides an easy and effective way to improve the crystalline quality of SrTiO3 thin films on Si, providing a path towards the development of electrically insulating, wafer scale virtual perovskite substrates.

Original languageEnglish (US)
Article number045301
JournalJournal of Applied Physics
Volume119
Issue number4
DOIs
StatePublished - Jan 28 2016

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electrical resistance
thin films
curves
preserving
thick films
film thickness
molecular beam epitaxy
templates
buffers
electrical properties
wafers
optimization
annealing
air

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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Improving the structural quality and electrical resistance of SrTiO3 thin films on Si (001) via a two-step anneal. / Zhang, Lei; Wang, Yaqiang; Engel-Herbert, Roman.

In: Journal of Applied Physics, Vol. 119, No. 4, 045301, 28.01.2016.

Research output: Contribution to journalArticle

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