Ferroelectric 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) thin films were deposited on ZrO2/SiO2/silicon substrates using a chemical-solution-deposition method. Using a thin PZT film as a seed layer for the PMN-PT films, phase-pure perovskite PMN-PT could be obtained via rapid thermal annealing at 750°C for 60 s. The electrical properties of in-plane polarized thin films were characterized using interdigitated electrode arrays on the film surface. Ferroelectric hysteresis loops are observed with much larger remanent polarizations (∼24 μC/cm2) than for through-the-thickness polarized PMN-PT thin films (10-12 μC/cm2) deposited on Pt/Ti/Si substrates. For a ringer spacing of 20 μm, the piezoelectric voltage sensitivity of in-plane polarized PMN-PT thin films was ∼20 times higher than that of through-the-thickness polarized PMN-PT thin films.
|Original language||English (US)|
|Number of pages||4|
|Journal||Journal of the American Ceramic Society|
|State||Published - Aug 2002|
All Science Journal Classification (ASJC) codes
- Ceramics and Composites
- Materials Chemistry