In-plane polarized 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 thin films

Qifa Zhou, Qingqi Zhang, Baomin Xu, Susan Trolier-McKinstry

Research output: Contribution to journalArticle

16 Scopus citations

Abstract

Ferroelectric 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3 (PMN-PT) thin films were deposited on ZrO2/SiO2/silicon substrates using a chemical-solution-deposition method. Using a thin PZT film as a seed layer for the PMN-PT films, phase-pure perovskite PMN-PT could be obtained via rapid thermal annealing at 750°C for 60 s. The electrical properties of in-plane polarized thin films were characterized using interdigitated electrode arrays on the film surface. Ferroelectric hysteresis loops are observed with much larger remanent polarizations (∼24 μC/cm2) than for through-the-thickness polarized PMN-PT thin films (10-12 μC/cm2) deposited on Pt/Ti/Si substrates. For a ringer spacing of 20 μm, the piezoelectric voltage sensitivity of in-plane polarized PMN-PT thin films was ∼20 times higher than that of through-the-thickness polarized PMN-PT thin films.

Original languageEnglish (US)
Pages (from-to)1997-2000
Number of pages4
JournalJournal of the American Ceramic Society
Volume85
Issue number8
DOIs
StatePublished - Aug 2002

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Materials Chemistry

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