In-plane quasi-single-domain BaTiO3 via interfacial symmetry engineering

J. W. Lee, K. Eom, T. R. Paudel, B. Wang, H. Lu, H. X. Huyan, S. Lindemann, S. Ryu, H. Lee, T. H. Kim, Y. Yuan, J. A. Zorn, S. Lei, W. P. Gao, T. Tybell, V. Gopalan, X. Q. Pan, A. Gruverman, L. Q. Chen, E. Y. TsymbalC. B. Eom

Research output: Contribution to journalArticlepeer-review

Abstract

The control of the in-plane domain evolution in ferroelectric thin films is not only critical to understanding ferroelectric phenomena but also to enabling functional device fabrication. However, in-plane polarized ferroelectric thin films typically exhibit complicated multi-domain states, not desirable for optoelectronic device performance. Here we report a strategy combining interfacial symmetry engineering and anisotropic strain to design single-domain, in-plane polarized ferroelectric BaTiO3 thin films. Theoretical calculations predict the key role of the BaTiO3/PrScO3(110) O substrate interfacial environment, where anisotropic strain, monoclinic distortions, and interfacial electrostatic potential stabilize a single-variant spontaneous polarization. A combination of scanning transmission electron microscopy, piezoresponse force microscopy, ferroelectric hysteresis loop measurements, and second harmonic generation measurements directly reveals the stabilization of the in-plane quasi-single-domain polarization state. This work offers design principles for engineering in-plane domains of ferroelectric oxide thin films, which is a prerequisite for high performance optoelectronic devices.

Original languageEnglish (US)
Article number6784
JournalNature communications
Volume12
Issue number1
DOIs
StatePublished - Dec 2021

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Biochemistry, Genetics and Molecular Biology(all)
  • Physics and Astronomy(all)

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