In situ laser annealing during growth of Pb(Zr0.52Ti 0.48)O3 thin films

Adarsh Rajashekhar, Austin Fox, S. S N Bharadwaja, Susan E. Trolier-McKinstry

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

A pulsed laser deposition system with in situ laser annealing was utilized to grow Pb(Zr0.52Ti0.48)O3 thin films on a laser crystallized Pb(Zr0.20Ti0.80)O3 seed layer, at a temperature of ∼370°C. Polycrystalline 1.1 μm thick films exhibited columnar grains with small grain sizes (∼30 nm). The films showed well-saturated hysteresis loops (with ∼25 μC/cm2 remanent polarization, ∼50 kV/cm coercive field) and exhibited loss tangents <2.5% with a permittivity of ∼730. Film orientation could be controlled via the substrate choice; {111} Pb(Zr0.52Ti0.48)O3 films were grown on oriented (111) Pb(Zr0.30Ti0.70)O 3 sol-gel seed layers, while {001} films were prepared on (100) SrTiO3 single crystals.

Original languageEnglish (US)
Article number032908
JournalApplied Physics Letters
Volume103
Issue number3
DOIs
StatePublished - Jul 15 2013

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laser annealing
thin films
seeds
tangents
pulsed laser deposition
thick films
grain size
hysteresis
gels
permittivity
single crystals
polarization
lasers
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Rajashekhar, Adarsh ; Fox, Austin ; Bharadwaja, S. S N ; Trolier-McKinstry, Susan E. / In situ laser annealing during growth of Pb(Zr0.52Ti 0.48)O3 thin films. In: Applied Physics Letters. 2013 ; Vol. 103, No. 3.
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abstract = "A pulsed laser deposition system with in situ laser annealing was utilized to grow Pb(Zr0.52Ti0.48)O3 thin films on a laser crystallized Pb(Zr0.20Ti0.80)O3 seed layer, at a temperature of ∼370°C. Polycrystalline 1.1 μm thick films exhibited columnar grains with small grain sizes (∼30 nm). The films showed well-saturated hysteresis loops (with ∼25 μC/cm2 remanent polarization, ∼50 kV/cm coercive field) and exhibited loss tangents <2.5{\%} with a permittivity of ∼730. Film orientation could be controlled via the substrate choice; {111} Pb(Zr0.52Ti0.48)O3 films were grown on oriented (111) Pb(Zr0.30Ti0.70)O 3 sol-gel seed layers, while {001} films were prepared on (100) SrTiO3 single crystals.",
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In situ laser annealing during growth of Pb(Zr0.52Ti 0.48)O3 thin films. / Rajashekhar, Adarsh; Fox, Austin; Bharadwaja, S. S N; Trolier-McKinstry, Susan E.

In: Applied Physics Letters, Vol. 103, No. 3, 032908, 15.07.2013.

Research output: Contribution to journalArticle

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AU - Rajashekhar, Adarsh

AU - Fox, Austin

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AU - Trolier-McKinstry, Susan E.

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