In situ measurement of stress generation arising from dislocation inclination in AlxGa1-xN:Si thin films

Jeremy D. Acord, Ian C. Manning, Xiaojun Weng, David W. Snyder, Joan Marie Redwing

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Abstract

The effect of Si-doping on the stress and microstructure of Al xGa1-xN (x≈0.39-0.45) films grown by metalorganic chemical vapor deposition on SiC substrates was investigated. In situ measurements revealed a compressive-to-tensile transition of the stress state at the film surface upon the addition of SiH4 during growth, which correlated with a change in the angle of inclination of threading dislocations in the film. The magnitude of the in situ measured stress gradient was comparable to that predicted by the dislocation effective climb model, suggesting that dislocation inclination is the dominant mechanism responsible for tensile stress generation in the films.

Original languageEnglish (US)
Article number111910
JournalApplied Physics Letters
Volume93
Issue number11
DOIs
StatePublished - Sep 29 2008

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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