In situ stress measurements during MOCVD growth of AlGaN on SiC

Engineering & Materials Science

• Metallorganic chemical vapor deposition 100%
• Stress measurement 77%
• Buffer layers 27%
• Compressive stress 13%
• Ultraviolet devices 12%
• Tensile stress 12%
• Lattice constants 9%
• Film thickness 6%
• Thermal expansion 6%
• Substrates 4%
• Defects 4%
• Chemical analysis 4%

Physics & Astronomy

• stress measurement 76%
• metalorganic chemical vapor deposition 60%
• buffers 16%
• tensile stress 12%
• thermal expansion 5%
• film thickness 5%
• defects 3%

Chemical Compounds

• Liquid Film 30%
• Buffer Solution 24%
• Lattice Constant 14%
• Thermal Expansion 13%