In-situ TEM study of domain switching in GaN thin films

Baoming Wang, Tun Wang, Aman Haque, Michael Snure, Eric Heller, Nicholas Glavin

Research output: Contribution to journalArticlepeer-review

Abstract

Microstructural response of gallium nitride (GaN) films, grown by metal-organic chemical vapor deposition, was studied as a function of applied electrical field. In-situ transmission electron microscopy showed sudden change in the electron diffraction pattern reflecting domain switching at around 20 V bias, applied perpendicular to the polarization direction. No such switching was observed for thicker films or for the field applied along the polarization direction. This anomalous behavior is explained by the nanoscale size effects on the piezoelectric coefficients of GaN, which can be 2-3 times larger than the bulk value. As a result, a large amount of internal energy can be imparted in 100 nm thick films to induce domain switching at relatively lower voltages to induce such events at the bulk scale.

Original languageEnglish (US)
Article number113103
JournalApplied Physics Letters
Volume111
Issue number11
DOIs
StatePublished - Sep 11 2017

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint

Dive into the research topics of 'In-situ TEM study of domain switching in GaN thin films'. Together they form a unique fingerprint.

Cite this