In situ transmission electron microscopy of transistor operation and failure

Baoming Wang, Zahabul Islam, Md Amanul Haque, Kelson Chabak, Michael Snure, Eric Heller, Nicholas Glavin

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Microscopy is typically used as a post-mortem analytical tool in performance and reliability studies on nanoscale materials and devices. In this study, we demonstrate real time microscopy of the operation and failure of AlGaN/GaN high electron mobility transistors inside the transmission electron microscope. Loading until failure was performed on the electron transparent transistors to visualize the failure mechanisms caused by self-heating. At lower drain voltages, thermo-mechanical stresses induce irreversible microstructural deformation, mostly along the AlGaN/GaN interface, to initiate the damage process. At higher biasing, the self-heating deteriorates the gate and catastrophic failure takes place through metal/semiconductor inter-diffusion and/or buffer layer breakdown. This study indicates that the current trend of recreating the events, from damage nucleation to catastrophic failure, can be replaced by in situ microscopy for a quick and accurate account of the failure mechanisms.

Original languageEnglish (US)
Article number31LT01
JournalNanotechnology
Volume29
Issue number31
DOIs
StatePublished - May 30 2018

Fingerprint

Microscopic examination
Transistors
Transmission electron microscopy
Interdiffusion (solids)
Heating
High electron mobility transistors
Buffer layers
Nucleation
Electron microscopes
Metals
Semiconductor materials
Electrons
Electric potential
aluminum gallium nitride

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

Wang, B., Islam, Z., Haque, M. A., Chabak, K., Snure, M., Heller, E., & Glavin, N. (2018). In situ transmission electron microscopy of transistor operation and failure. Nanotechnology, 29(31), [31LT01]. https://doi.org/10.1088/1361-6528/aac591
Wang, Baoming ; Islam, Zahabul ; Haque, Md Amanul ; Chabak, Kelson ; Snure, Michael ; Heller, Eric ; Glavin, Nicholas. / In situ transmission electron microscopy of transistor operation and failure. In: Nanotechnology. 2018 ; Vol. 29, No. 31.
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Wang, B, Islam, Z, Haque, MA, Chabak, K, Snure, M, Heller, E & Glavin, N 2018, 'In situ transmission electron microscopy of transistor operation and failure', Nanotechnology, vol. 29, no. 31, 31LT01. https://doi.org/10.1088/1361-6528/aac591

In situ transmission electron microscopy of transistor operation and failure. / Wang, Baoming; Islam, Zahabul; Haque, Md Amanul; Chabak, Kelson; Snure, Michael; Heller, Eric; Glavin, Nicholas.

In: Nanotechnology, Vol. 29, No. 31, 31LT01, 30.05.2018.

Research output: Contribution to journalArticle

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