InAlAsSb/InGaSb double heterojunction bipolar transistor

R. Magna, J. B. Boos, P. M. Campbell, B. R. Bennett, E. R. Glaser, M. G. Ancona, B. P. Tinkham, D. Park, N. A. Papanicolaou, K. Ikossi, B. V. Shanabrook, Suzanne E. Mohney

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Future high-speed analog and digital systems that will benefit significantly from reduced power consumption while maintaining high data transmission rates include wireless applications, space-based, micro-air-vehicles and other portable systems used for communications, imaging, data processing, and sensing. The development of Sb-based transistors for use in low-noise high-frequency amplifiers, digital circuits, and mixed-signal circuits will provide the enabling technology needed to address these rapidly expanding needs. We report on the development of an npn double heterojunction bipolar transistor (DHBT) with an InGaSb base and InAlAsSb alloys for the emitter and collector. The combination of alloys with a lattice constant of 6.2Å is illustrated in Fig. 1. Silvaco simulations indicate that large collector currents, Ic, are possible with this system at smaller base-emitter voltages, VBE, than are measured in the InP based HBTs. An important advantage of this system is that the conduction band offset between the InGaSb base and the InAlAsSb may be tuned over a large range while maintaining large valence band offsets that are useful for minimizing parasitic base currents. A problem with the InAlAsSb alloys is the difficulty of growing mixed group V alloys.

Original languageEnglish (US)
Title of host publication2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages202-203
Number of pages2
ISBN (Electronic)0780381394, 9780780381391
DOIs
StatePublished - Jan 1 2003
EventInternational Semiconductor Device Research Symposium, ISDRS 2003 - Washington, United States
Duration: Dec 10 2003Dec 12 2003

Other

OtherInternational Semiconductor Device Research Symposium, ISDRS 2003
CountryUnited States
CityWashington
Period12/10/0312/12/03

Fingerprint

Heterojunction bipolar transistors
High frequency amplifiers
Micro air vehicle (MAV)
Low noise amplifiers
Space applications
Digital circuits
Valence bands
Conduction bands
Data communication systems
Lattice constants
Transistors
Electric power utilization
Imaging techniques
Networks (circuits)
Communication
Electric potential

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Magna, R., Boos, J. B., Campbell, P. M., Bennett, B. R., Glaser, E. R., Ancona, M. G., ... Mohney, S. E. (2003). InAlAsSb/InGaSb double heterojunction bipolar transistor. In 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings (pp. 202-203). [1272061] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISDRS.2003.1272061
Magna, R. ; Boos, J. B. ; Campbell, P. M. ; Bennett, B. R. ; Glaser, E. R. ; Ancona, M. G. ; Tinkham, B. P. ; Park, D. ; Papanicolaou, N. A. ; Ikossi, K. ; Shanabrook, B. V. ; Mohney, Suzanne E. / InAlAsSb/InGaSb double heterojunction bipolar transistor. 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2003. pp. 202-203
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abstract = "Future high-speed analog and digital systems that will benefit significantly from reduced power consumption while maintaining high data transmission rates include wireless applications, space-based, micro-air-vehicles and other portable systems used for communications, imaging, data processing, and sensing. The development of Sb-based transistors for use in low-noise high-frequency amplifiers, digital circuits, and mixed-signal circuits will provide the enabling technology needed to address these rapidly expanding needs. We report on the development of an npn double heterojunction bipolar transistor (DHBT) with an InGaSb base and InAlAsSb alloys for the emitter and collector. The combination of alloys with a lattice constant of 6.2{\AA} is illustrated in Fig. 1. Silvaco simulations indicate that large collector currents, Ic, are possible with this system at smaller base-emitter voltages, VBE, than are measured in the InP based HBTs. An important advantage of this system is that the conduction band offset between the InGaSb base and the InAlAsSb may be tuned over a large range while maintaining large valence band offsets that are useful for minimizing parasitic base currents. A problem with the InAlAsSb alloys is the difficulty of growing mixed group V alloys.",
author = "R. Magna and Boos, {J. B.} and Campbell, {P. M.} and Bennett, {B. R.} and Glaser, {E. R.} and Ancona, {M. G.} and Tinkham, {B. P.} and D. Park and Papanicolaou, {N. A.} and K. Ikossi and Shanabrook, {B. V.} and Mohney, {Suzanne E.}",
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Magna, R, Boos, JB, Campbell, PM, Bennett, BR, Glaser, ER, Ancona, MG, Tinkham, BP, Park, D, Papanicolaou, NA, Ikossi, K, Shanabrook, BV & Mohney, SE 2003, InAlAsSb/InGaSb double heterojunction bipolar transistor. in 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings., 1272061, Institute of Electrical and Electronics Engineers Inc., pp. 202-203, International Semiconductor Device Research Symposium, ISDRS 2003, Washington, United States, 12/10/03. https://doi.org/10.1109/ISDRS.2003.1272061

InAlAsSb/InGaSb double heterojunction bipolar transistor. / Magna, R.; Boos, J. B.; Campbell, P. M.; Bennett, B. R.; Glaser, E. R.; Ancona, M. G.; Tinkham, B. P.; Park, D.; Papanicolaou, N. A.; Ikossi, K.; Shanabrook, B. V.; Mohney, Suzanne E.

2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2003. p. 202-203 1272061.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - InAlAsSb/InGaSb double heterojunction bipolar transistor

AU - Magna, R.

AU - Boos, J. B.

AU - Campbell, P. M.

AU - Bennett, B. R.

AU - Glaser, E. R.

AU - Ancona, M. G.

AU - Tinkham, B. P.

AU - Park, D.

AU - Papanicolaou, N. A.

AU - Ikossi, K.

AU - Shanabrook, B. V.

AU - Mohney, Suzanne E.

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N2 - Future high-speed analog and digital systems that will benefit significantly from reduced power consumption while maintaining high data transmission rates include wireless applications, space-based, micro-air-vehicles and other portable systems used for communications, imaging, data processing, and sensing. The development of Sb-based transistors for use in low-noise high-frequency amplifiers, digital circuits, and mixed-signal circuits will provide the enabling technology needed to address these rapidly expanding needs. We report on the development of an npn double heterojunction bipolar transistor (DHBT) with an InGaSb base and InAlAsSb alloys for the emitter and collector. The combination of alloys with a lattice constant of 6.2Å is illustrated in Fig. 1. Silvaco simulations indicate that large collector currents, Ic, are possible with this system at smaller base-emitter voltages, VBE, than are measured in the InP based HBTs. An important advantage of this system is that the conduction band offset between the InGaSb base and the InAlAsSb may be tuned over a large range while maintaining large valence band offsets that are useful for minimizing parasitic base currents. A problem with the InAlAsSb alloys is the difficulty of growing mixed group V alloys.

AB - Future high-speed analog and digital systems that will benefit significantly from reduced power consumption while maintaining high data transmission rates include wireless applications, space-based, micro-air-vehicles and other portable systems used for communications, imaging, data processing, and sensing. The development of Sb-based transistors for use in low-noise high-frequency amplifiers, digital circuits, and mixed-signal circuits will provide the enabling technology needed to address these rapidly expanding needs. We report on the development of an npn double heterojunction bipolar transistor (DHBT) with an InGaSb base and InAlAsSb alloys for the emitter and collector. The combination of alloys with a lattice constant of 6.2Å is illustrated in Fig. 1. Silvaco simulations indicate that large collector currents, Ic, are possible with this system at smaller base-emitter voltages, VBE, than are measured in the InP based HBTs. An important advantage of this system is that the conduction band offset between the InGaSb base and the InAlAsSb may be tuned over a large range while maintaining large valence band offsets that are useful for minimizing parasitic base currents. A problem with the InAlAsSb alloys is the difficulty of growing mixed group V alloys.

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M3 - Conference contribution

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BT - 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Magna R, Boos JB, Campbell PM, Bennett BR, Glaser ER, Ancona MG et al. InAlAsSb/InGaSb double heterojunction bipolar transistor. In 2003 International Semiconductor Device Research Symposium, ISDRS 2003 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2003. p. 202-203. 1272061 https://doi.org/10.1109/ISDRS.2003.1272061