Incorporating Niobium in MoS2 at BEOL-Compatible Temperatures and its Impact on Copper Diffusion Barrier Performance

Rui Zhao, Chun Li Lo, Fu Zhang, Ram Krishna Ghosh, Theresia Knobloch, Mauricio Terrones, Zhihong Chen, Joshua Robinson

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


The continuous scaling of transistors has led to unprecedented challenges for interconnect technologies. Conventional barriers fail when thinned below 4 nm; therefore, novel materials and back-end-of-line (BEOL) compatible synthesis are urgently needed. 2D transition metal dichalcogenides present a unique opportunity for addressing the scaling of interconnects. Here, nanometer thick Nb-incorporated MoS2 is successfully synthesized at BEOL compatible temperatures and their abilities of blocking Cu atom diffusion are investigated. Nb incorporation of MoS2 is systematically studied at 450 °C and its growth dynamics is compared with those carried out at high temperatures. The addition of a few percent Nb in MoS2 enhances breakdown time by more than 100×, reaching a failure time >12 500 s under the electric field of 7 MV cm−1. These results suggest that integration of Nb-incorporated MoS2 in electronic technologies is a promising route for the sub-5 nm technology node.

Original languageEnglish (US)
Article number1901055
JournalAdvanced Materials Interfaces
Issue number22
StatePublished - Nov 1 2019

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering


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