Abstract
The continuous scaling of transistors has led to unprecedented challenges for interconnect technologies. Conventional barriers fail when thinned below 4 nm; therefore, novel materials and back-end-of-line (BEOL) compatible synthesis are urgently needed. 2D transition metal dichalcogenides present a unique opportunity for addressing the scaling of interconnects. Here, nanometer thick Nb-incorporated MoS2 is successfully synthesized at BEOL compatible temperatures and their abilities of blocking Cu atom diffusion are investigated. Nb incorporation of MoS2 is systematically studied at 450 °C and its growth dynamics is compared with those carried out at high temperatures. The addition of a few percent Nb in MoS2 enhances breakdown time by more than 100×, reaching a failure time >12 500 s under the electric field of 7 MV cm−1. These results suggest that integration of Nb-incorporated MoS2 in electronic technologies is a promising route for the sub-5 nm technology node.
| Original language | English (US) |
|---|---|
| Article number | 1901055 |
| Journal | Advanced Materials Interfaces |
| Volume | 6 |
| Issue number | 22 |
| DOIs | |
| State | Published - Nov 1 2019 |
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All Science Journal Classification (ASJC) codes
- Mechanics of Materials
- Mechanical Engineering
Cite this
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Incorporating Niobium in MoS2 at BEOL-Compatible Temperatures and its Impact on Copper Diffusion Barrier Performance. / Zhao, Rui; Lo, Chun Li; Zhang, Fu; Ghosh, Ram Krishna; Knobloch, Theresia; Terrones, Mauricio; Chen, Zhihong; Robinson, Joshua.
In: Advanced Materials Interfaces, Vol. 6, No. 22, 1901055, 01.11.2019.Research output: Contribution to journal › Article
TY - JOUR
T1 - Incorporating Niobium in MoS2 at BEOL-Compatible Temperatures and its Impact on Copper Diffusion Barrier Performance
AU - Zhao, Rui
AU - Lo, Chun Li
AU - Zhang, Fu
AU - Ghosh, Ram Krishna
AU - Knobloch, Theresia
AU - Terrones, Mauricio
AU - Chen, Zhihong
AU - Robinson, Joshua
PY - 2019/11/1
Y1 - 2019/11/1
N2 - The continuous scaling of transistors has led to unprecedented challenges for interconnect technologies. Conventional barriers fail when thinned below 4 nm; therefore, novel materials and back-end-of-line (BEOL) compatible synthesis are urgently needed. 2D transition metal dichalcogenides present a unique opportunity for addressing the scaling of interconnects. Here, nanometer thick Nb-incorporated MoS2 is successfully synthesized at BEOL compatible temperatures and their abilities of blocking Cu atom diffusion are investigated. Nb incorporation of MoS2 is systematically studied at 450 °C and its growth dynamics is compared with those carried out at high temperatures. The addition of a few percent Nb in MoS2 enhances breakdown time by more than 100×, reaching a failure time >12 500 s under the electric field of 7 MV cm−1. These results suggest that integration of Nb-incorporated MoS2 in electronic technologies is a promising route for the sub-5 nm technology node.
AB - The continuous scaling of transistors has led to unprecedented challenges for interconnect technologies. Conventional barriers fail when thinned below 4 nm; therefore, novel materials and back-end-of-line (BEOL) compatible synthesis are urgently needed. 2D transition metal dichalcogenides present a unique opportunity for addressing the scaling of interconnects. Here, nanometer thick Nb-incorporated MoS2 is successfully synthesized at BEOL compatible temperatures and their abilities of blocking Cu atom diffusion are investigated. Nb incorporation of MoS2 is systematically studied at 450 °C and its growth dynamics is compared with those carried out at high temperatures. The addition of a few percent Nb in MoS2 enhances breakdown time by more than 100×, reaching a failure time >12 500 s under the electric field of 7 MV cm−1. These results suggest that integration of Nb-incorporated MoS2 in electronic technologies is a promising route for the sub-5 nm technology node.
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U2 - 10.1002/admi.201901055
DO - 10.1002/admi.201901055
M3 - Article
AN - SCOPUS:85073946920
VL - 6
JO - Advanced Materials Interfaces
JF - Advanced Materials Interfaces
SN - 2196-7350
IS - 22
M1 - 1901055
ER -