Incorporating Niobium in MoS2 at BEOL-Compatible Temperatures and its Impact on Copper Diffusion Barrier Performance

Rui Zhao, Chun Li Lo, Fu Zhang, Ram Krishna Ghosh, Theresia Knobloch, Mauricio Terrones, Zhihong Chen, Joshua Robinson

Research output: Contribution to journalArticle

Abstract

The continuous scaling of transistors has led to unprecedented challenges for interconnect technologies. Conventional barriers fail when thinned below 4 nm; therefore, novel materials and back-end-of-line (BEOL) compatible synthesis are urgently needed. 2D transition metal dichalcogenides present a unique opportunity for addressing the scaling of interconnects. Here, nanometer thick Nb-incorporated MoS2 is successfully synthesized at BEOL compatible temperatures and their abilities of blocking Cu atom diffusion are investigated. Nb incorporation of MoS2 is systematically studied at 450 °C and its growth dynamics is compared with those carried out at high temperatures. The addition of a few percent Nb in MoS2 enhances breakdown time by more than 100×, reaching a failure time >12 500 s under the electric field of 7 MV cm−1. These results suggest that integration of Nb-incorporated MoS2 in electronic technologies is a promising route for the sub-5 nm technology node.

Original languageEnglish (US)
Article number1901055
JournalAdvanced Materials Interfaces
Volume6
Issue number22
DOIs
StatePublished - Nov 1 2019

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Diffusion barriers
Niobium
Copper
Temperature
Transition metals
Transistors
Electric fields
Atoms

All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Zhao, Rui ; Lo, Chun Li ; Zhang, Fu ; Ghosh, Ram Krishna ; Knobloch, Theresia ; Terrones, Mauricio ; Chen, Zhihong ; Robinson, Joshua. / Incorporating Niobium in MoS2 at BEOL-Compatible Temperatures and its Impact on Copper Diffusion Barrier Performance. In: Advanced Materials Interfaces. 2019 ; Vol. 6, No. 22.
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Incorporating Niobium in MoS2 at BEOL-Compatible Temperatures and its Impact on Copper Diffusion Barrier Performance. / Zhao, Rui; Lo, Chun Li; Zhang, Fu; Ghosh, Ram Krishna; Knobloch, Theresia; Terrones, Mauricio; Chen, Zhihong; Robinson, Joshua.

In: Advanced Materials Interfaces, Vol. 6, No. 22, 1901055, 01.11.2019.

Research output: Contribution to journalArticle

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