Increasing the switching frequency of GaN HFET converters

Brian Hughes, Rongming Chu, James Lazar, Karim Boutros

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

GaN-on-Si switches, hard-switching 400V at 1MHz, have demonstrated power conversion with 96% efficiency, outperforming Si MOSFETs. This performance was achieved using hybrid integration of bare GaN and gate driver die, resulting in clean waveforms with a slew rate of 100V/ns. The new Si Super-Junction (SJ) MOSFETs have a hard-switching figure-of-merit (FOM) which is approaching that of GaN HFETs. However, GaN's FOM for soft-switching is more than 9X better than Si SJMOSFET. Using this FOM, GaN ICs in 400V soft-switching converters are predicted to switch beyond 100MHz.

Original languageEnglish (US)
Title of host publication2015 IEEE International Electron Devices Meeting, IEDM 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages16.7.1-16.7.4
ISBN (Electronic)9781467398930
DOIs
StatePublished - Feb 16 2015
Event61st IEEE International Electron Devices Meeting, IEDM 2015 - Washington, United States
Duration: Dec 7 2015Dec 9 2015

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2016-February
ISSN (Print)0163-1918

Other

Other61st IEEE International Electron Devices Meeting, IEDM 2015
CountryUnited States
CityWashington
Period12/7/1512/9/15

Fingerprint

Switching frequency
converters
Switches
figure of merit
field effect transistors
switches
waveforms

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Hughes, B., Chu, R., Lazar, J., & Boutros, K. (2015). Increasing the switching frequency of GaN HFET converters. In 2015 IEEE International Electron Devices Meeting, IEDM 2015 (pp. 16.7.1-16.7.4). [7409714] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2016-February). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2015.7409714
Hughes, Brian ; Chu, Rongming ; Lazar, James ; Boutros, Karim. / Increasing the switching frequency of GaN HFET converters. 2015 IEEE International Electron Devices Meeting, IEDM 2015. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 16.7.1-16.7.4 (Technical Digest - International Electron Devices Meeting, IEDM).
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abstract = "GaN-on-Si switches, hard-switching 400V at 1MHz, have demonstrated power conversion with 96{\%} efficiency, outperforming Si MOSFETs. This performance was achieved using hybrid integration of bare GaN and gate driver die, resulting in clean waveforms with a slew rate of 100V/ns. The new Si Super-Junction (SJ) MOSFETs have a hard-switching figure-of-merit (FOM) which is approaching that of GaN HFETs. However, GaN's FOM for soft-switching is more than 9X better than Si SJMOSFET. Using this FOM, GaN ICs in 400V soft-switching converters are predicted to switch beyond 100MHz.",
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Hughes, B, Chu, R, Lazar, J & Boutros, K 2015, Increasing the switching frequency of GaN HFET converters. in 2015 IEEE International Electron Devices Meeting, IEDM 2015., 7409714, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2016-February, Institute of Electrical and Electronics Engineers Inc., pp. 16.7.1-16.7.4, 61st IEEE International Electron Devices Meeting, IEDM 2015, Washington, United States, 12/7/15. https://doi.org/10.1109/IEDM.2015.7409714

Increasing the switching frequency of GaN HFET converters. / Hughes, Brian; Chu, Rongming; Lazar, James; Boutros, Karim.

2015 IEEE International Electron Devices Meeting, IEDM 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 16.7.1-16.7.4 7409714 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2016-February).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Hughes B, Chu R, Lazar J, Boutros K. Increasing the switching frequency of GaN HFET converters. In 2015 IEEE International Electron Devices Meeting, IEDM 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 16.7.1-16.7.4. 7409714. (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2015.7409714