Increasing the switching frequency of GaN HFET converters

Brian Hughes, Rongming Chu, James Lazar, Karim Boutros

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Scopus citations

Abstract

GaN-on-Si switches, hard-switching 400V at 1MHz, have demonstrated power conversion with 96% efficiency, outperforming Si MOSFETs. This performance was achieved using hybrid integration of bare GaN and gate driver die, resulting in clean waveforms with a slew rate of 100V/ns. The new Si Super-Junction (SJ) MOSFETs have a hard-switching figure-of-merit (FOM) which is approaching that of GaN HFETs. However, GaN's FOM for soft-switching is more than 9X better than Si SJMOSFET. Using this FOM, GaN ICs in 400V soft-switching converters are predicted to switch beyond 100MHz.

Original languageEnglish (US)
Title of host publication2015 IEEE International Electron Devices Meeting, IEDM 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages16.7.1-16.7.4
ISBN (Electronic)9781467398930
DOIs
StatePublished - Feb 16 2015
Event61st IEEE International Electron Devices Meeting, IEDM 2015 - Washington, United States
Duration: Dec 7 2015Dec 9 2015

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2016-February
ISSN (Print)0163-1918

Other

Other61st IEEE International Electron Devices Meeting, IEDM 2015
CountryUnited States
CityWashington
Period12/7/1512/9/15

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Hughes, B., Chu, R., Lazar, J., & Boutros, K. (2015). Increasing the switching frequency of GaN HFET converters. In 2015 IEEE International Electron Devices Meeting, IEDM 2015 (pp. 16.7.1-16.7.4). [7409714] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2016-February). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2015.7409714