Inducing magnetism onto the surface of a topological crystalline insulator

B. A. Assaf, F. Katmis, P. Wei, Cui Zu Chang, B. Satpati, J. S. Moodera, D. Heiman

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

Inducing magnetism onto a topological crystalline insulator (TCI) has been predicted to result in several novel quantum electromagnetic effects. This is a consequence of the highly strain-sensitive band topology of such symmetry-protected systems. We thus show that placing the TCI surface of SnTe in proximity to EuS - a ferromagnetic insulator - induces magnetism at the interface between SnTe and EuS, and thus breaks time-reversal symmetry in the TCI. Magnetotransport experiments on SnTe-EuS-SnTe trilayer devices reveal a hysteretic lowering of the resistance at the TCI surface that coincides with an increase in the density of magnetic domain walls. This additional conduction could be a signature of topologically protected states within domain walls. Additionally, a hysteretic anomalous Hall effect reveals that the usual in-plane magnetic moment of the EuS layer is canted towards a perpendicular direction at the interface. These results are evidence of induced magnetism at the SnTe-EuS interfaces, resulting in broken time-reversal symmetry in the TCI.

Original languageEnglish (US)
Article number195310
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume91
Issue number19
DOIs
StatePublished - May 11 2015

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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