Inductive damage and the impact of RF power and magnetic field during MERIE processes

A. Salah, Osama O. Awadelkarim, Y. D. Chan, J. Werking

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

This paper reports on a new form of process-induced damage to submicron MOS transistors caused by metal 1 plasma etching. This form of damage, herein referred to as 'inductive damage', is suggested to arise from inductive coupling between interconnect circuitry and time-varying magnetic fields during plasma exposure. The occurrence of inductive damage is demonstrated through the use of specially designed test structures consisting of fuse-attached metal loops acting as inductive antennas and connecting the gate and substrate of n-channel and p-channel MOSFETs. The MOSFETs, with lightly doped drains and channel lengths of 0.25 μm and 0.50 μm, are fabricated on 200 mm p/p+ silicon wafers using a full CMOS process flow. The metal 1 etch step was carried out using a BCl3/N2/Cl2 plasma in a magnetically-enhanced reactive ion etching (MERIE) tool.

Original languageEnglish (US)
Title of host publicationInternational Symposium on Plasma Process-Induced Damage, P2ID, Proceedings
PublisherIEEE
Pages131-132
Number of pages2
StatePublished - 1996
EventProceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID - Santa Clara, CA, USA
Duration: May 13 1996May 14 1996

Other

OtherProceedings of the 1996 1st International Symposium on Plasma Process-Induced Damage, P2ID
CitySanta Clara, CA, USA
Period5/13/965/14/96

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Salah, A., Awadelkarim, O. O., Chan, Y. D., & Werking, J. (1996). Inductive damage and the impact of RF power and magnetic field during MERIE processes. In International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings (pp. 131-132). IEEE.