Influence of atomic hydrogen on nickel silicide formation

A. Vengurlekar, Satheesh Balasubramanian, S. Ashok, N. D. Theodore, D. Z. Chi

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations

Abstract

Nickel monosilicide (NiSi) is a leading contender to replace the currently used class of silicides for contacts to the source, drain and gate regions in Complimentary Metal-Oxide-Semiconductor (CMOS) circuits. In this work, the effect of substrate hydrogenation by a hydrogen plasma treatment prior to nickel deposition and silicidation was studied. The sheet resistance of the silicide film shows a significant decrease under hydrogenation of the Si substrate prior to Ni evaporation/anneal for projected silicidation temperatures below 600°C. Correspondingly, the Si region near the interface is decorated with defects. At higher silicidation temperatures, the sheet resistance rises along with greater in-diffusion of Ni into the hydrogenated Si samples. Secondary Ion Mass Spectrometry, Transmission Electron Microscopy and Hall effect measurements are used to characterize the samples.

Original languageEnglish (US)
Pages (from-to)159-164
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume810
DOIs
StatePublished - 2004
EventSilicon Front-End Junction Formation - Physics and Technology - San Francisco, CA, United States
Duration: Apr 13 2004Apr 15 2004

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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