Influence of base additives on the reaction-diffusion front of model chemically amplified photoresists

Bryan D. Vogt, Shuhui Kang, Vivek M. Prabhu, Ashwin Rao, Eric K. Lin, Wen Li Wu, Sushil K. Satija, Karen Turnquest

Research output: Contribution to journalArticlepeer-review

32 Scopus citations

Abstract

The effects of amine base quencher on the photoacid catalyzed deprotection reaction-diffusion front in model photoresists were measured by combination of neutron reflectivity and Fourier transform infrared spectroscopy. Modulation in the location of the base with respect to the diffusing photoacid catalyst changes the spatial reaction extent and illuminates the complex role of the base on the shape of the reaction-diffusion front. Despite similar total extents of reaction, a comparison between uniform base and model photodegradable base distributions demonstrates distinct reaction time and base concentration effects on the deprotection profile shape. These differences arise from the modification of the initial deprotection extent due to both the neutralization of the photoacid and the influence of the changing photoresist composition on the reaction-diffusion process. The use of the model photodegradable base results in a sharper front due to these effects. Lastly, aqueous hydroxide development of these latent images demonstrates a limit to the improvement in feature quality obtained from sharpening of the deprotection profile with base additives.

Original languageEnglish (US)
Pages (from-to)175-182
Number of pages8
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume25
Issue number1
DOIs
StatePublished - 2007

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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